Mechanism of the reaction of WF6 and Si

P.A.C. Groenen; J.G.A. Hölscher; H.H. Brongersma

doi:10.1016/0169-4332(94)00115-4

Mechanism of the reaction of WF6 and Si

P.A.C. Groenen, J.G.A. Hölscher, H.H. Brongersma^*

^*Corresponding author for this work

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Abstract

The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15–20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

Original language	English
Pages (from-to)	123-132
Journal	Applied surface science
Issue number	78
DOIs	https://doi.org/10.1016/0169-4332(94)00115-4
Publication status	Published - 1994
Externally published	Yes

Keywords

n/a OA procedure

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abstract = "The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15–20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.",

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author = "P.A.C. Groenen and J.G.A. H{\"o}lscher and H.H. Brongersma",

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AU - Groenen, P.A.C.

AU - Hölscher, J.G.A.

AU - Brongersma, H.H.

PY - 1994

Y1 - 1994

N2 - The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15–20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

AB - The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15–20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

KW - n/a OA procedure

U2 - 10.1016/0169-4332(94)00115-4

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SP - 123

EP - 132

JO - Applied surface science

JF - Applied surface science

IS - 78

ER -

Mechanism of the reaction of WF6 and Si

Abstract

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