In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.
|Title of host publication||Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 23 Nov 2006|
|Event||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands|
Duration: 23 Nov 2006 → 24 Nov 2006
Conference number: 9
|Publisher||Technology Foundation STW|
|Workshop||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006|
|Period||23/11/06 → 24/11/06|
- SC-ICF: Integrated Circuit Fabrication
Brunets, I., van Hemert, T., Boogaard, A., Aarnink, A. A. I., Kovalgin, A. Y., Holleman, J., & Schmitz, J. (2006). Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 419-422). Utrecht, The Netherlands: STW.