Abstract
In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 419-422 |
| Number of pages | 4 |
| ISBN (Print) | 978-90-73461-44-4 |
| Publication status | Published - 23 Nov 2006 |
| Event | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
| Number | 10 |
Workshop
| Workshop | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 23/11/06 → 24/11/06 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- IR-63759
- METIS-237707
- EWI-8413
Cite this
Brunets, I., van Hemert, T., Boogaard, A., Aarnink, A. A. I., Kovalgin, A. Y., Holleman, J., & Schmitz, J. (2006). Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 419-422). Utrecht, The Netherlands: STW.