Memory devices with encapsulated Si nano-crystals: Realization and Characterization.

I. Brunets; T. van Hemert; A. Boogaard; Antonius A.I. Aarnink; Alexeij Y. Kovalgin; J. Holleman; Jurriaan Schmitz

Memory devices with encapsulated Si nano-crystals: Realization and Characterization.

I. Brunets, T. van Hemert, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, J. Holleman, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.

Original language	Undefined
Title of host publication	Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	419-422
Number of pages	4
ISBN (Print)	978-90-73461-44-4
Publication status	Published - 23 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Publication series

Name
Publisher	Technology Foundation STW
Number	10

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

SC-ICF: Integrated Circuit Fabrication
IR-63759
METIS-237707
EWI-8413

Access to Document

http://eprints.eemcs.utwente.nl/secure2/8413/01/brunets.pdf

Cite this

Brunets, I., van Hemert, T., Boogaard, A., Aarnink, A. A. I., Kovalgin, A. Y., Holleman, J., & Schmitz, J. (2006). Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 419-422). STW. http://eprints.eemcs.utwente.nl/secure2/8413/01/brunets.pdf

Brunets, I. ; van Hemert, T. ; Boogaard, A. ; Aarnink, Antonius A.I. ; Kovalgin, Alexeij Y. ; Holleman, J. ; Schmitz, Jurriaan. / Memory devices with encapsulated Si nano-crystals: Realization and Characterization. Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. pp. 419-422

@inproceedings{7a701c42d6dd472b9b5d9fdd93a8e166,

title = "Memory devices with encapsulated Si nano-crystals: Realization and Characterization.",

abstract = "In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.",

keywords = "SC-ICF: Integrated Circuit Fabrication, IR-63759, METIS-237707, EWI-8413",

author = "I. Brunets and {van Hemert}, T. and A. Boogaard and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.} and J. Holleman and Jurriaan Schmitz",

note = "http://eprints.ewi.utwente.nl/8413 ; null ; Conference date: 23-11-2006 Through 24-11-2006",

year = "2006",

month = nov,

day = "23",

language = "Undefined",

isbn = "978-90-73461-44-4",

publisher = "STW",

number = "10",

pages = "419--422",

booktitle = "Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

}

Brunets, I, van Hemert, T, Boogaard, A, Aarnink, AAI , Kovalgin, AY, Holleman, J & Schmitz, J 2006, Memory devices with encapsulated Si nano-crystals: Realization and Characterization. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 419-422, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06. <http://eprints.eemcs.utwente.nl/secure2/8413/01/brunets.pdf>

Memory devices with encapsulated Si nano-crystals: Realization and Characterization. / Brunets, I.; van Hemert, T.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Holleman, J.; Schmitz, Jurriaan.

Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. p. 419-422.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Memory devices with encapsulated Si nano-crystals: Realization and Characterization.

AU - Brunets, I.

AU - van Hemert, T.

AU - Boogaard, A.

AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - Conference code: 9

PY - 2006/11/23

Y1 - 2006/11/23

N2 - In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.

AB - In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.

KW - SC-ICF: Integrated Circuit Fabrication

KW - IR-63759

KW - METIS-237707

KW - EWI-8413

M3 - Conference contribution

SN - 978-90-73461-44-4

SP - 419

EP - 422

BT - Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

CY - Utrecht, The Netherlands

Y2 - 23 November 2006 through 24 November 2006

ER -