Abstract
In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.
Original language | Undefined |
---|---|
Title of host publication | Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
Place of Publication | Utrecht, The Netherlands |
Publisher | STW |
Pages | 419-422 |
Number of pages | 4 |
ISBN (Print) | 978-90-73461-44-4 |
Publication status | Published - 23 Nov 2006 |
Event | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9 |
Publication series
Name | |
---|---|
Publisher | Technology Foundation STW |
Number | 10 |
Workshop
Workshop | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 |
---|---|
Country/Territory | Netherlands |
City | Veldhoven |
Period | 23/11/06 → 24/11/06 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- IR-63759
- METIS-237707
- EWI-8413