Abstract
A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH3 concentration, 0.7 % in H 2, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.
Original language | English |
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Title of host publication | Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2 |
Pages | 237-244 |
Number of pages | 8 |
Edition | 5 |
DOIs | |
Publication status | Published - 29 Dec 2010 |
Externally published | Yes |
Event | 2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010 - Vancouver, Canada Duration: 26 Apr 2010 → 29 Apr 2010 Conference number: 2 |
Publication series
Name | ECS Transactions |
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Number | 5 |
Volume | 28 |
ISSN (Print) | 1938-5862 |
ISSN (Electronic) | 1938-6737 |
Conference
Conference | 2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010 |
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Country/Territory | Canada |
City | Vancouver |
Period | 26/04/10 → 29/04/10 |
Other | Held at the 217th ECS Meeting |