Merging standard CVD techniques for GaAs and Si epitaxial growth

A. Sammak; W. De Boer; A. Van Den Bogaard; L. K. Nanver

doi:10.1149/1.3367956

Merging standard CVD techniques for GaAs and Si epitaxial growth

A. Sammak^*, W. De Boer, A. Van Den Bogaard, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH₃ in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH₃ concentration, 0.7 % in H ₂, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.

Original language	English
Title of host publication	Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Pages	237-244
Number of pages	8
Edition	5
DOIs	https://doi.org/10.1149/1.3367956
Publication status	Published - 29 Dec 2010
Externally published	Yes
Event	2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010 - Vancouver, Canada Duration: 26 Apr 2010 → 29 Apr 2010 Conference number: 2

Publication series

Name	ECS Transactions
Number	5
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010
Country	Canada
City	Vancouver
Period	26/04/10 → 29/04/10
Other	Held at the 217th ECS Meeting

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title = "Merging standard CVD techniques for GaAs and Si epitaxial growth",

abstract = "A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH3 concentration, 0.7 % in H 2, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.",

author = "A. Sammak and {De Boer}, W. and {Van Den Bogaard}, A. and Nanver, {L. K.}",

year = "2010",

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booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2",

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note = "2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010 ; Conference date: 26-04-2010 Through 29-04-2010",

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Sammak, A, De Boer, W, Van Den Bogaard, A & Nanver, LK 2010, Merging standard CVD techniques for GaAs and Si epitaxial growth. in Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2. 5 edn, ECS Transactions, no. 5, vol. 28, pp. 237-244, 2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010, Vancouver, Canada, 26/04/10. https://doi.org/10.1149/1.3367956

Merging standard CVD techniques for GaAs and Si epitaxial growth. / Sammak, A.; De Boer, W.; Van Den Bogaard, A.; Nanver, L. K.

Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2. 5. ed. 2010. p. 237-244 (ECS Transactions; Vol. 28, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH3 concentration, 0.7 % in H 2, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.

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Merging standard CVD techniques for GaAs and Si epitaxial growth

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