Merging standard CVD techniques for GaAs and Si epitaxial growth

A. Sammak*, W. De Boer, A. Van Den Bogaard, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH3 concentration, 0.7 % in H 2, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Pages237-244
Number of pages8
Edition5
DOIs
Publication statusPublished - 29 Dec 2010
Externally publishedYes
Event2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010 - Vancouver, Canada
Duration: 26 Apr 201029 Apr 2010
Conference number: 2

Publication series

NameECS Transactions
Number5
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications 2010
CountryCanada
CityVancouver
Period26/04/1029/04/10
OtherHeld at the 217th ECS Meeting

Fingerprint Dive into the research topics of 'Merging standard CVD techniques for GaAs and Si epitaxial growth'. Together they form a unique fingerprint.

Cite this