Metal contacts to lowly doped Si and ultra thin SOI

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    Abstract

    We present our investigations on the fabrication of ohmic and Schottky contacts of several metals on lowly doped bulk Si and SOI wafers. Through this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced.
    Original languageUndefined
    Title of host publicationProceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
    Place of PublicationGotheburg, Sweden
    PublisherChalmers University of Technology
    Pages29-30
    Number of pages2
    ISBN (Print)not assigned
    Publication statusPublished - 18 Jan 2009

    Publication series

    Name
    PublisherChalmers University of Technology

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-65430
    • METIS-263781
    • EWI-15226

    Cite this

    Rajasekharan, B., Salm, C., Wolters, R. A. M., Aarnink, A. A. I., Boogaard, A., & Schmitz, J. (2009). Metal contacts to lowly doped Si and ultra thin SOI. In Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 29-30). Gotheburg, Sweden: Chalmers University of Technology.