Metal contacts to lowly doped Si and ultra thin SOI

B. Rajasekharan; Cora Salm; Robertus A.M. Wolters; Antonius A.I. Aarnink; A. Boogaard; Jurriaan Schmitz

Metal contacts to lowly doped Si and ultra thin SOI

B. Rajasekharan, Cora Salm, Robertus A.M. Wolters, Antonius A.I. Aarnink, A. Boogaard, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present our investigations on the fabrication of ohmic and Schottky contacts of several metals on lowly doped bulk Si and SOI wafers. Through this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced.

Original language	Undefined
Title of host publication	Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
Place of Publication	Gotheburg, Sweden
Publisher	Chalmers University of Technology
Pages	29-30
Number of pages	2
ISBN (Print)	not assigned
Publication status	Published - 18 Jan 2009

Publication series

Name
Publisher	Chalmers University of Technology

Keywords

SC-ICF: Integrated Circuit Fabrication
IR-65430
METIS-263781
EWI-15226

Access to Document

EUROSOI2009
open
EUROSOI2009
open

Cite this

Rajasekharan, B., Salm, C., Wolters, R. A. M., Aarnink, A. A. I., Boogaard, A., & Schmitz, J. (2009). Metal contacts to lowly doped Si and ultra thin SOI. In Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 29-30). Gotheburg, Sweden: Chalmers University of Technology.

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Metal contacts to lowly doped Si and ultra thin SOI. / Rajasekharan, B.; Salm, Cora ; Wolters, Robertus A.M.; Aarnink, Antonius A.I.; Boogaard, A.; Schmitz, Jurriaan.

Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Gotheburg, Sweden : Chalmers University of Technology, 2009. p. 29-30.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Metal contacts to lowly doped Si and ultra thin SOI

AU - Rajasekharan, B.

AU - Salm, Cora

AU - Wolters, Robertus A.M.

AU - Aarnink, Antonius A.I.

AU - Boogaard, A.

AU - Schmitz, Jurriaan

N1 - http://chalmers2009.eurosoi.org/

PY - 2009/1/18

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N2 - We present our investigations on the fabrication of ohmic and Schottky contacts of several metals on lowly doped bulk Si and SOI wafers. Through this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced.

AB - We present our investigations on the fabrication of ohmic and Schottky contacts of several metals on lowly doped bulk Si and SOI wafers. Through this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced.

KW - SC-ICF: Integrated Circuit Fabrication

KW - IR-65430

KW - METIS-263781

KW - EWI-15226

M3 - Conference contribution

SN - not assigned

SP - 29

EP - 30

BT - Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits

PB - Chalmers University of Technology

CY - Gotheburg, Sweden

ER -