Metal contacts to lowly doped Si and ultra thin SOI

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    We present our investigations on the fabrication of ohmic and pchottky contacts of several metals on lowly doped bulk pi and plf wafers. qhrough this paper we evaluate the fabrication of rectifying devices in which no doping is intentionally introduced.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages103-104
    Number of pages2
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • METIS-264276
    • EWI-17073
    • IR-69061

    Cite this

    Rajasekharan, B., Salm, C., Hueting, R. J. E., Wolters, R. A. M., & Schmitz, J. (2009). Metal contacts to lowly doped Si and ultra thin SOI. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 103-104). Utrecht, The Netherlands: STW.