Metal emitter SiGe:C HBTs

J. J.T.M. Donkers*, T. Vanhoucke, P. Agarwal, R. J.E. Hueting, P. Meunier-Beillard, M. N. Vijayaraghavan, P. H.C. Magnée, M. A. Verheijen, R. De Kort, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

11 Citations (Scopus)

Abstract

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BV CEO. due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BV CEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.

Original languageEnglish
Title of host publicationIEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
PublisherIEEE
Pages243-246
Number of pages4
ISBN (Print)0-7803-8684-1
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States
Duration: 13 Dec 200415 Dec 2004

Conference

Conference2004 IEEE International Electron Devices Meeting, IEDM 2004
Abbreviated titleIEDM
CountryUnited States
CitySan Francisco
Period13/12/0415/12/04

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