Metal emitter SiGe:C HBTs

J. J.T.M. Donkers; T. Vanhoucke; P. Agarwal; R. J.E. Hueting; P. Meunier-Beillard; M. N. Vijayaraghavan; P. H.C. Magnée; M. A. Verheijen; R. De Kort; J. W. Slotboom

doi:10.1109/IEDM.2004.1419121

Metal emitter SiGe:C HBTs

J. J.T.M. Donkers^*, T. Vanhoucke, P. Agarwal, R. J.E. Hueting, P. Meunier-Beillard, M. N. Vijayaraghavan, P. H.C. Magnée, M. A. Verheijen, R. De Kort, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

Abstract

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f_T, but low open base breakdown voltages, BV _CEO. due to the relatively high current gain, h_FE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I_B without reducing the collector current, I_C. Hence, the BV _CEO is increased without affecting the f_T. Furthermore, this metal emitter reduces the emitter series resistance, R_E, and increases the f_T compared with a mono-emitter. SiGe:C HBTs with f_T=230GHz and BV_CEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.

Original language	English
Title of host publication	IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
Publisher	IEEE
Pages	243-246
Number of pages	4
ISBN (Print)	0-7803-8684-1
DOIs	https://doi.org/10.1109/IEDM.2004.1419121
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States Duration: 13 Dec 2004 → 15 Dec 2004

Conference

Conference	2004 IEEE International Electron Devices Meeting, IEDM 2004
Abbreviated title	IEDM
Country/Territory	United States
City	San Francisco
Period	13/12/04 → 15/12/04

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@inproceedings{a8c0c6c363be4a488f2da883c32440b8,

title = "Metal emitter SiGe:C HBTs",

abstract = "SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BV CEO. due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BV CEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.",

author = "Donkers, {J. J.T.M.} and T. Vanhoucke and P. Agarwal and Hueting, {R. J.E.} and P. Meunier-Beillard and Vijayaraghavan, {M. N.} and Magn{\'e}e, {P. H.C.} and Verheijen, {M. A.} and {De Kort}, R. and Slotboom, {J. W.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/IEDM.2004.1419121",

language = "English",

isbn = "0-7803-8684-1",

pages = "243--246",

booktitle = "IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.",

publisher = "IEEE",

address = "United States",

note = "2004 IEEE International Electron Devices Meeting, IEDM 2004, IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

Donkers, JJTM, Vanhoucke, T, Agarwal, P, Hueting, RJE, Meunier-Beillard, P, Vijayaraghavan, MN, Magnée, PHC, Verheijen, MA, De Kort, R & Slotboom, JW 2004, Metal emitter SiGe:C HBTs. in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.. IEEE, pp. 243-246, 2004 IEEE International Electron Devices Meeting, IEDM 2004, San Francisco, California, United States, 13/12/04. https://doi.org/10.1109/IEDM.2004.1419121

TY - GEN

T1 - Metal emitter SiGe:C HBTs

AU - Donkers, J. J.T.M.

AU - Vanhoucke, T.

AU - Agarwal, P.

AU - Hueting, R. J.E.

AU - Meunier-Beillard, P.

AU - Vijayaraghavan, M. N.

AU - Magnée, P. H.C.

AU - Verheijen, M. A.

AU - De Kort, R.

AU - Slotboom, J. W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BV CEO. due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BV CEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.

AB - SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BV CEO. due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BV CEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.

UR - http://www.scopus.com/inward/record.url?scp=21644439051&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2004.1419121

DO - 10.1109/IEDM.2004.1419121

M3 - Conference contribution

AN - SCOPUS:21644439051

SN - 0-7803-8684-1

SP - 243

EP - 246

BT - IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.

PB - IEEE

T2 - 2004 IEEE International Electron Devices Meeting, IEDM 2004

Y2 - 13 December 2004 through 15 December 2004

ER -

Metal emitter SiGe:C HBTs

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