SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BV CEO. due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BV CEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.
|Title of host publication||IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.|
|Number of pages||4|
|Publication status||Published - 1 Dec 2004|
|Event||2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States|
Duration: 13 Dec 2004 → 15 Dec 2004
|Conference||2004 IEEE International Electron Devices Meeting, IEDM 2004|
|Period||13/12/04 → 15/12/04|