Metal Hydride assited contamination on Ru/Si surfaces

Research output: Contribution to conferencePoster

Abstract

In extreme ultraviolet lithography (EUVL) residual tin, in the form of particles, ions, and atoms, can be deposited on nearby EUV optics. During the EUV pulse, a reactive hydrogen plasma is formed, which may be able to react with metal contaminants, creating volatile and unstable metal hydrides that are free to diffuse throughout the vacuum system, spreading the contamination to other optical surfaces. Detailed study of metal and metal hydride surface chemistry is required. Furthermore, to understand the contamination process, hydride formation and hydride dissociation must also be better understood.
Original languageUndefined
Pages-
Publication statusPublished - 20 Jun 2013
Event14th ASML Technology Conference 2013 - Hotel NH Eindhoven Conference Centre Koningshof, Eindhoven, Netherlands
Duration: 20 Jun 201320 Jun 2013
Conference number: 14

Conference

Conference14th ASML Technology Conference 2013
CountryNetherlands
CityEindhoven
Period20/06/1320/06/13

Keywords

  • METIS-299690

Cite this

Pachecka, M., Lee, C. J., Sturm, J. M., & Bijkerk, F. (2013). Metal Hydride assited contamination on Ru/Si surfaces. -. Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.