Metal Induced Gap States on Pt/Ge(001)

N. Oncel, W.J. van Beek, B. Poelsema, H.J.W. Zandvliet

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Abstract

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting metallic and semiconducting terraces. Spatially resolved STS measurements reveal that the higher lying metallic terraces induce electronic states in the band gap region of the lower lying semiconducting terraces.
Original languageEnglish
Article number449
Number of pages7
JournalNew journal of physics
Volume9
Issue number12
DOIs
Publication statusPublished - 2007

Keywords

  • METIS-245035
  • IR-59276

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