Abstract
Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting metallic and semiconducting terraces. Spatially resolved STS measurements reveal that the higher lying metallic terraces induce electronic states in the band gap region of the lower lying semiconducting terraces.
Original language | English |
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Article number | 449 |
Number of pages | 7 |
Journal | New journal of physics |
Volume | 9 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2007 |
Keywords
- METIS-245035
- IR-59276