Metal-insulator transition of SrVO3 ultrathin films embedded in SrVO3/SrTiO3 superlattices

J. Wang, Nicolas Gauquelin, M. Huijben, Johan Verbeeck, A.J.H.M. Rijnders, G. Koster* (Corresponding Author)

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The metal-insulator transition (MIT) in strongly correlated oxides is a topic of great interest for its potential applications, such as Mott field effect transistors and sensors. We report that the MIT in high quality epitaxial SrVO3SrVO3 (SVO) thin films is present as the film thickness is reduced, lowering the dimensionality of the system, and electron-electron correlations start to become the dominant interactions. The critical thickness of 3 u.c is achieved by avoiding effects due to off-stoichiometry using optimal growth conditions and excluding any surface effects by a STO capping layer. Compared to the single SVO thin films, conductivity enhancement in SVO/STO superlattices is observed. This can be explained by the interlayer coupling effect between SVO sublayers in the superlattices. Magnetoresistance and Hall measurements indicate that the dominant driving force of MIT is the electron–electron interaction.We thank Alexander Brinkman for valuable discussions. This work was supported by Nederlandse Organisatie voor Wetenschappelijk Onderzoek through Grant No. 13HTSM01.
Original languageEnglish
Article number133105
Number of pages5
JournalApplied physics letters
Volume117
Issue number13
DOIs
Publication statusPublished - 28 Sep 2020

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