Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist

G. Sengo, Hendricus A.G.M. van Wolferen, Kerstin Worhoff, A. Driessen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures.
    Original languageEnglish
    Title of host publication11th Annual Symposium IEEE/LEOS Benelux
    EditorsA.M.J. Koonen, X.J.M. Leijtens, H.P.A. van den Boom, E.J.M. Verdurmen, J. Molina Vazquez
    Place of PublicationEindhoven
    PublisherIEEE/LEOS Benelux Chapter
    Pages109-112
    Number of pages4
    ISBN (Print)978-90-6144-989-8
    Publication statusPublished - 30 Nov 2006
    Event11th Annual Symposium IEEE/LEOS Benelux Chapter 2006 - Eindhoven, The Netherlands, Eindhoven, Netherlands
    Duration: 30 Nov 20061 Dec 2006
    Conference number: 11

    Publication series

    Name
    PublisherIEEE LEOS Benelux Chapter
    NumberTechnical

    Conference

    Conference11th Annual Symposium IEEE/LEOS Benelux Chapter 2006
    CountryNetherlands
    CityEindhoven
    Period30/11/061/12/06

    Keywords

    • EWI-8910
    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
    • IR-66824
    • METIS-237861

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