Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist

G. Sengo; Hendricus A.G.M. van Wolferen; Kerstin Worhoff; A. Driessen

Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist

G. Sengo, Hendricus A.G.M. van Wolferen, Kerstin Worhoff, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

72 Downloads (Pure)

Abstract

Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures.

Original language	English
Title of host publication	11th Annual Symposium IEEE/LEOS Benelux
Editors	A.M.J. Koonen, X.J.M. Leijtens, H.P.A. van den Boom, E.J.M. Verdurmen, J. Molina Vazquez
Place of Publication	Eindhoven
Publisher	IEEE/LEOS Benelux Chapter
Pages	109-112
Number of pages	4
ISBN (Print)	978-90-6144-989-8
Publication status	Published - 30 Nov 2006
Event	11th Annual Symposium IEEE/LEOS Benelux Chapter 2006 - Eindhoven, The Netherlands, Eindhoven, Netherlands Duration: 30 Nov 2006 → 1 Dec 2006 Conference number: 11

Publication series

Name
Publisher	IEEE LEOS Benelux Chapter
Number	Technical

Conference

Conference	11th Annual Symposium IEEE/LEOS Benelux Chapter 2006
Country/Territory	Netherlands
City	Eindhoven
Period	30/11/06 → 1/12/06

Keywords

EWI-8910
IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
IR-66824
METIS-237861

Access to Document

http://leosbenelux.org/symp06/s06p109.pdf

Cite this

Sengo, G., van Wolferen, H. A. G. M., Worhoff, K., & Driessen, A. (2006). Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. In A. M. J. Koonen, X. J. M. Leijtens, H. P. A. van den Boom, E. J. M. Verdurmen, & J. Molina Vazquez (Eds.), 11th Annual Symposium IEEE/LEOS Benelux (pp. 109-112). IEEE/LEOS Benelux Chapter. http://leosbenelux.org/symp06/s06p109.pdf

Sengo, G. ; van Wolferen, Hendricus A.G.M. ; Worhoff, Kerstin et al. / Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. 11th Annual Symposium IEEE/LEOS Benelux. editor / A.M.J. Koonen ; X.J.M. Leijtens ; H.P.A. van den Boom ; E.J.M. Verdurmen ; J. Molina Vazquez. Eindhoven : IEEE/LEOS Benelux Chapter, 2006. pp. 109-112

@inproceedings{f0dad2a85fe14118822f1417fd876b36,

title = "Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist",

abstract = "Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures.",

keywords = "EWI-8910, IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY, IR-66824, METIS-237861",

author = "G. Sengo and {van Wolferen}, {Hendricus A.G.M.} and Kerstin Worhoff and A. Driessen",

year = "2006",

month = nov,

day = "30",

language = "English",

isbn = "978-90-6144-989-8",

publisher = "IEEE/LEOS Benelux Chapter",

number = "Technical",

pages = "109--112",

editor = "A.M.J. Koonen and X.J.M. Leijtens and {van den Boom}, H.P.A. and E.J.M. Verdurmen and {Molina Vazquez}, J.",

booktitle = "11th Annual Symposium IEEE/LEOS Benelux",

note = "11th Annual Symposium IEEE/LEOS Benelux Chapter 2006 ; Conference date: 30-11-2006 Through 01-12-2006",

}

Sengo, G, van Wolferen, HAGM, Worhoff, K & Driessen, A 2006, Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. in AMJ Koonen, XJM Leijtens, HPA van den Boom, EJM Verdurmen & J Molina Vazquez (eds), 11th Annual Symposium IEEE/LEOS Benelux. IEEE/LEOS Benelux Chapter, Eindhoven, pp. 109-112, 11th Annual Symposium IEEE/LEOS Benelux Chapter 2006, Eindhoven, Netherlands, 30/11/06. <http://leosbenelux.org/symp06/s06p109.pdf>

Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. / Sengo, G.; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin et al.

11th Annual Symposium IEEE/LEOS Benelux. ed. / A.M.J. Koonen; X.J.M. Leijtens; H.P.A. van den Boom; E.J.M. Verdurmen; J. Molina Vazquez. Eindhoven : IEEE/LEOS Benelux Chapter, 2006. p. 109-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist

AU - Sengo, G.

AU - van Wolferen, Hendricus A.G.M.

AU - Worhoff, Kerstin

AU - Driessen, A.

N1 - Conference code: 11

PY - 2006/11/30

Y1 - 2006/11/30

N2 - Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures.

AB - Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures.

KW - EWI-8910

KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

KW - IR-66824

KW - METIS-237861

M3 - Conference contribution

SN - 978-90-6144-989-8

SP - 109

EP - 112

BT - 11th Annual Symposium IEEE/LEOS Benelux

A2 - Koonen, A.M.J.

A2 - Leijtens, X.J.M.

A2 - van den Boom, H.P.A.

A2 - Verdurmen, E.J.M.

A2 - Molina Vazquez, J.

PB - IEEE/LEOS Benelux Chapter

CY - Eindhoven

T2 - 11th Annual Symposium IEEE/LEOS Benelux Chapter 2006

Y2 - 30 November 2006 through 1 December 2006

ER -

Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this