METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE

Albert Van Den Berg (Inventor), Johan Bomer (Inventor), Thomas Carlen Edwin (Inventor), Songyue Chen (Inventor), Adriaan Kraaijenhagen Roderik (Inventor), Michael Pinedo Herbert (Inventor)

    Research output: Patent

    Abstract

    A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

    Original languageEnglish
    Patent numberUS2012202325
    IPCH01L 21/ 311 A I
    Priority date16/08/10
    Publication statusPublished - 9 Aug 2012

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    manufacturing
    wire
    single crystals
    cross sections
    masks
    etching

    Cite this

    Van Den Berg, A., Bomer, J., Carlen Edwin, T., Chen, S., Kraaijenhagen Roderik, A., & Pinedo Herbert, M. (2012). IPC No. H01L 21/ 311 A I. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE. (Patent No. US2012202325).
    Van Den Berg, Albert (Inventor) ; Bomer, Johan (Inventor) ; Carlen Edwin, Thomas (Inventor) ; Chen, Songyue (Inventor) ; Kraaijenhagen Roderik, Adriaan (Inventor) ; Pinedo Herbert, Michael (Inventor). / METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE. IPC No.: H01L 21/ 311 A I. Patent No.: US2012202325.
    @misc{59f2ae38140c42ba9ff97ebc32e55751,
    title = "METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE",
    abstract = "A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.",
    author = "{Van Den Berg}, Albert and Johan Bomer and {Carlen Edwin}, Thomas and Songyue Chen and {Kraaijenhagen Roderik}, Adriaan and {Pinedo Herbert}, Michael",
    year = "2012",
    month = "8",
    day = "9",
    language = "English",
    type = "Patent",
    note = "US2012202325; H01L 21/ 311 A I",

    }

    Van Den Berg, A, Bomer, J, Carlen Edwin, T, Chen, S, Kraaijenhagen Roderik, A & Pinedo Herbert, M 2012, METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE, Patent No. US2012202325, IPC No. H01L 21/ 311 A I.

    METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE. / Van Den Berg, Albert (Inventor); Bomer, Johan (Inventor); Carlen Edwin, Thomas (Inventor); Chen, Songyue (Inventor); Kraaijenhagen Roderik, Adriaan (Inventor); Pinedo Herbert, Michael (Inventor).

    IPC No.: H01L 21/ 311 A I. Patent No.: US2012202325.

    Research output: Patent

    TY - PAT

    T1 - METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE

    AU - Van Den Berg, Albert

    AU - Bomer, Johan

    AU - Carlen Edwin, Thomas

    AU - Chen, Songyue

    AU - Kraaijenhagen Roderik, Adriaan

    AU - Pinedo Herbert, Michael

    PY - 2012/8/9

    Y1 - 2012/8/9

    N2 - A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

    AB - A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

    M3 - Patent

    M1 - US2012202325

    ER -

    Van Den Berg A, Bomer J, Carlen Edwin T, Chen S, Kraaijenhagen Roderik A, Pinedo Herbert M, inventors. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE. H01L 21/ 311 A I. 2012 Aug 9.