Method for manufacturing a single crystal nano-wire

Albert van den Berg (Inventor), Johan Bomer (Inventor), Edwin Thomas Carlen (Inventor), Songyue Chen (Inventor), Roderik Adriaan Kraaijenhagen (Inventor), Herbert Michael Pinedo (Inventor)

    Research output: Patent

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    Abstract

    A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

    Original languageEnglish
    Patent numberUS20120202325
    IPCH01L 21/ 311 A I
    Priority date16/08/10
    Publication statusPublished - 9 Aug 2012

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  • Cite this

    van den Berg, A., Bomer, J., Carlen, E. T., Chen, S., Kraaijenhagen, R. A., & Pinedo, H. M. (2012). IPC No. H01L 21/ 311 A I. Method for manufacturing a single crystal nano-wire. (Patent No. US20120202325).