Abstract
A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.
| Original language | English |
|---|---|
| Patent number | US2012202325 |
| IPC | H01L 21/ 311 A I |
| Priority date | 16/08/10 |
| Publication status | Published - 9 Aug 2012 |
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METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE. / Van Den Berg, Albert (Inventor); Bomer, Johan (Inventor); Carlen Edwin, Thomas (Inventor); Chen, Songyue (Inventor); Kraaijenhagen Roderik, Adriaan (Inventor); Pinedo Herbert, Michael (Inventor).
IPC No.: H01L 21/ 311 A I. Patent No.: US2012202325.Research output: Patent
TY - PAT
T1 - METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE
AU - Van Den Berg, Albert
AU - Bomer, Johan
AU - Carlen Edwin, Thomas
AU - Chen, Songyue
AU - Kraaijenhagen Roderik, Adriaan
AU - Pinedo Herbert, Michael
PY - 2012/8/9
Y1 - 2012/8/9
N2 - A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.
AB - A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.
M3 - Patent
M1 - US2012202325
ER -