Method for manufacturing a single crystal nano-wire

Albert van den Berg; Johan Bomer; Edwin Thomas Carlen; Songyue Chen; Roderik Adriaan Kraaijenhagen; Herbert Michael Pinedo

Method for manufacturing a single crystal nano-wire

Albert van den Berg (Inventor), Johan Bomer (Inventor), Edwin Thomas Carlen (Inventor), Songyue Chen (Inventor), Roderik Adriaan Kraaijenhagen (Inventor), Herbert Michael Pinedo (Inventor)

Research output: Patent

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Abstract

A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

Original language	English
Patent number	US20120202325
IPC	H01L 21/ 311 A I
Priority date	16/08/10
Publication status	Published - 9 Aug 2012

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US20120202325A1Final published version, 329 KB

http://www.freepatentsonline.com/y2012/0202325.html

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van den Berg, A., Bomer, J., Carlen, E. T., Chen, S., Kraaijenhagen, R. A., & Pinedo, H. M. (2012). IPC No. H01L 21/ 311 A I. Method for manufacturing a single crystal nano-wire. (Patent No. US20120202325).

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abstract = "A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.",

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AU - Carlen, Edwin Thomas

AU - Chen, Songyue

AU - Kraaijenhagen, Roderik Adriaan

AU - Pinedo, Herbert Michael

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