Method for manufacturing a single crystal nanowire

Albert van den Berg (Inventor), Johan G. Bomer (Inventor), Edwin Carlen (Inventor), S. Chen (Inventor), R.A. Kraaijenhagen (Inventor), Herbert Michael Pinedo (Inventor)

    Research output: Patent

    9 Downloads (Pure)

    Abstract

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face
    Original languageUndefined
    Patent numberEP20100745680
    Publication statusSubmitted - 16 Aug 2010

    Keywords

    • EWI-24130

    Cite this

    van den Berg, A., Bomer, J. G., Carlen, E., Chen, S., Kraaijenhagen, R. A., & Pinedo, H. M. (2010). Method for manufacturing a single crystal nanowire. Manuscript submitted for publication. (Patent No. EP20100745680).