Method for manufacturing a single crystal nanowire

Albert van den Berg (Inventor), Johan G. Bomer (Inventor), Edwin Carlen (Inventor), S. Chen (Inventor), R.A. Kraaijenhagen (Inventor), Herbert Michael Pinedo (Inventor)

Research output: PatentProfessional

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Abstract

A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face
Original languageUndefined
Patent numberEP20100745680
Publication statusSubmitted - 16 Aug 2010

Keywords

  • EWI-24130

Cite this

van den Berg, A., Bomer, J. G., Carlen, E., Chen, S., Kraaijenhagen, R. A., & Pinedo, H. M. (2010). Method for manufacturing a single crystal nanowire. Manuscript submitted for publication. (Patent No. EP20100745680).
van den Berg, Albert (Inventor) ; Bomer, Johan G. (Inventor) ; Carlen, Edwin (Inventor) ; Chen, S. (Inventor) ; Kraaijenhagen, R.A. (Inventor) ; Pinedo, Herbert Michael (Inventor). / Method for manufacturing a single crystal nanowire. Patent No.: EP20100745680.
@misc{1142ff4d6cc546989cd4146a539eb699,
title = "Method for manufacturing a single crystal nanowire",
abstract = "A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face",
keywords = "EWI-24130",
author = "{van den Berg}, Albert and Bomer, {Johan G.} and Edwin Carlen and S. Chen and R.A. Kraaijenhagen and Pinedo, {Herbert Michael}",
year = "2010",
month = "8",
day = "16",
language = "Undefined",
type = "Patent",
note = "EP20100745680",

}

van den Berg, A, Bomer, JG, Carlen, E, Chen, S, Kraaijenhagen, RA & Pinedo, HM 2010, Method for manufacturing a single crystal nanowire, Patent No. EP20100745680.

Method for manufacturing a single crystal nanowire. / van den Berg, Albert (Inventor); Bomer, Johan G. (Inventor); Carlen, Edwin (Inventor); Chen, S. (Inventor); Kraaijenhagen, R.A. (Inventor); Pinedo, Herbert Michael (Inventor).

Patent No.: EP20100745680.

Research output: PatentProfessional

TY - PAT

T1 - Method for manufacturing a single crystal nanowire

AU - van den Berg, Albert

AU - Bomer, Johan G.

AU - Carlen, Edwin

AU - Chen, S.

AU - Kraaijenhagen, R.A.

AU - Pinedo, Herbert Michael

PY - 2010/8/16

Y1 - 2010/8/16

N2 - A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face

AB - A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face

KW - EWI-24130

M3 - Patent

M1 - EP20100745680

ER -

van den Berg A, Bomer JG, Carlen E, Chen S, Kraaijenhagen RA, Pinedo HM, inventors. Method for manufacturing a single crystal nanowire. EP20100745680. 2010 Aug 16.