Method for manufacturing a single crystal nanowire

Albert van den Berg (Inventor), Johan G. Bomer (Inventor), Edwin Carlen (Inventor), S. Chen (Inventor), R.A. Kraaijenhagen (Inventor), Herbert Michael Pinedo (Inventor)

    Research output: Patent

    7 Downloads (Pure)

    Abstract

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face
    Original languageUndefined
    Patent numberEP20100745680
    Publication statusSubmitted - 16 Aug 2010

    Keywords

    • EWI-24130

    Cite this

    van den Berg, A., Bomer, J. G., Carlen, E., Chen, S., Kraaijenhagen, R. A., & Pinedo, H. M. (2010). Method for manufacturing a single crystal nanowire. Manuscript submitted for publication. (Patent No. EP20100745680).
    van den Berg, Albert (Inventor) ; Bomer, Johan G. (Inventor) ; Carlen, Edwin (Inventor) ; Chen, S. (Inventor) ; Kraaijenhagen, R.A. (Inventor) ; Pinedo, Herbert Michael (Inventor). / Method for manufacturing a single crystal nanowire. Patent No.: EP20100745680.
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    title = "Method for manufacturing a single crystal nanowire",
    abstract = "A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face",
    keywords = "EWI-24130",
    author = "{van den Berg}, Albert and Bomer, {Johan G.} and Edwin Carlen and S. Chen and R.A. Kraaijenhagen and Pinedo, {Herbert Michael}",
    year = "2010",
    month = "8",
    day = "16",
    language = "Undefined",
    type = "Patent",
    note = "EP20100745680",

    }

    van den Berg, A, Bomer, JG, Carlen, E, Chen, S, Kraaijenhagen, RA & Pinedo, HM 2010, Method for manufacturing a single crystal nanowire, Patent No. EP20100745680.

    Method for manufacturing a single crystal nanowire. / van den Berg, Albert (Inventor); Bomer, Johan G. (Inventor); Carlen, Edwin (Inventor); Chen, S. (Inventor); Kraaijenhagen, R.A. (Inventor); Pinedo, Herbert Michael (Inventor).

    Patent No.: EP20100745680.

    Research output: Patent

    TY - PAT

    T1 - Method for manufacturing a single crystal nanowire

    AU - van den Berg, Albert

    AU - Bomer, Johan G.

    AU - Carlen, Edwin

    AU - Chen, S.

    AU - Kraaijenhagen, R.A.

    AU - Pinedo, Herbert Michael

    PY - 2010/8/16

    Y1 - 2010/8/16

    N2 - A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face

    AB - A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structurewith a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with said side of the cross section of the oxidized exposed 111 face

    KW - EWI-24130

    M3 - Patent

    M1 - EP20100745680

    ER -

    van den Berg A, Bomer JG, Carlen E, Chen S, Kraaijenhagen RA, Pinedo HM, inventors. Method for manufacturing a single crystal nanowire. EP20100745680. 2010 Aug 16.