Method of forming a device structure using selective deposition of gallium nitride and system for same

Sourish Banerjee (Inventor), Antonius A.I. Aarnink (Inventor), Alexey Y. Kovalgin (Inventor)

    Research output: Patent

    Abstract

    The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.
    Original languageEnglish
    Patent numberApplication Number: 62779684
    Publication statusSubmitted - 14 Dec 2018

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    Cite this

    Banerjee, S., Aarnink, A. A. I., & Kovalgin, A. Y. (2018). Method of forming a device structure using selective deposition of gallium nitride and system for same. Manuscript submitted for publication. (Patent No. Application Number: 62779684).
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    abstract = "The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.",
    author = "Sourish Banerjee and Aarnink, {Antonius A.I.} and Kovalgin, {Alexey Y.}",
    year = "2018",
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    type = "Patent",
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    AU - Banerjee, Sourish

    AU - Aarnink, Antonius A.I.

    AU - Kovalgin, Alexey Y.

    PY - 2018/12/14

    Y1 - 2018/12/14

    N2 - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

    AB - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

    M3 - Patent

    M1 - Application Number: 62779684

    ER -