Method of forming a device structure using selective deposition of gallium nitride and system for same

Sourish Banerjee (Inventor), Antonius Aarnink (Inventor), Alexey Kovalgin (Inventor)

    Research output: Patent

    Abstract

    The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.
    Original languageEnglish
    Patent number62/779684
    Filing date12/12/19
    Publication statusPublished - 18 Jun 2020

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