Method of forming a device structure using selective deposition of gallium nitride and system for same

Sourish Banerjee (Inventor), Antonius A.I. Aarnink (Inventor), Alexey Y. Kovalgin (Inventor)

Research output: PatentProfessional

Abstract

The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.
Original languageEnglish
Patent numberApplication Number: 62779684
Publication statusSubmitted - 14 Dec 2018

Fingerprint

gallium
method

Cite this

Banerjee, S., Aarnink, A. A. I., & Kovalgin, A. Y. (2018). Method of forming a device structure using selective deposition of gallium nitride and system for same. Manuscript submitted for publication. (Patent No. Application Number: 62779684).
@misc{76c2d549bb7d4de8872e6d51320986d6,
title = "Method of forming a device structure using selective deposition of gallium nitride and system for same",
abstract = "The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.",
author = "Sourish Banerjee and Aarnink, {Antonius A.I.} and Kovalgin, {Alexey Y.}",
year = "2018",
month = "12",
day = "14",
language = "English",
type = "Patent",
note = "Application Number: 62779684",

}

Method of forming a device structure using selective deposition of gallium nitride and system for same. / Banerjee, Sourish (Inventor); Aarnink, Antonius A.I. (Inventor); Kovalgin, Alexey Y. (Inventor).

Patent No.: Application Number: 62779684.

Research output: PatentProfessional

TY - PAT

T1 - Method of forming a device structure using selective deposition of gallium nitride and system for same

AU - Banerjee, Sourish

AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexey Y.

PY - 2018/12/14

Y1 - 2018/12/14

N2 - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

AB - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

M3 - Patent

M1 - Application Number: 62779684

ER -