Method of forming a device structure using selective deposition of gallium nitride and system for same

Sourish  Banerjee; Antonius Aarnink; Alexey Kovalgin

Method of forming a device structure using selective deposition of gallium nitride and system for same

Sourish Banerjee (Inventor), Antonius Aarnink (Inventor), Alexey Kovalgin (Inventor)

Research output: Patent

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Abstract

The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

Original language	English
Patent number	62/779684
Filing date	12/12/19
Publication status	Published - 18 Jun 2020

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title = "Method of forming a device structure using selective deposition of gallium nitride and system for same",

abstract = "The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.",

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AU - Banerjee, Sourish

AU - Aarnink, Antonius

AU - Kovalgin, Alexey

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Y1 - 2020/6/18

N2 - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

AB - The present disclosure generally relates to thin-film deposition methods, to structures formed using the methods, and to systems for performing the methods. More particularly, the disclosure relates to methods of selectively depositing gallium nitride to form device structures and to related structures and systems.

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Method of forming a device structure using selective deposition of gallium nitride and system for same

Abstract

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