Methodology for performing RF reliability experiments on a generic test structure

G.T. Sasse, Rein J. de Vries, Jurriaan Schmitz

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    4 Citations (Scopus)
    103 Downloads (Pure)

    Abstract

    This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.
    Original languageUndefined
    Title of host publication20th ICMTS Conference Proceedings
    Place of PublicationLos Alamitos
    PublisherIEEE Computer Society Press
    Pages177-182
    Number of pages6
    ISBN (Print)1-4244-0780-X
    DOIs
    Publication statusPublished - 19 Mar 2007
    Event20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 - Tokyo, Japan
    Duration: 19 Mar 200722 Mar 2007
    Conference number: 20

    Publication series

    Name
    PublisherIEEE Computer Society Press
    Number2

    Conference

    Conference20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007
    Abbreviated titleICMTS
    CountryJapan
    CityTokyo
    Period19/03/0722/03/07

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • METIS-241562
    • IR-67043
    • EWI-9607

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