Methodology for performing RF reliability experiments on a generic test structure

G.T. Sasse; Rein J. de Vries; Jurriaan Schmitz

doi:10.1109/ICMTS.2007.374478

Methodology for performing RF reliability experiments on a generic test structure

G.T. Sasse, Rein J. de Vries, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

296 Downloads (Pure)

Abstract

This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.

Original language	Undefined
Title of host publication	20th ICMTS Conference Proceedings
Place of Publication	Los Alamitos
Publisher	IEEE
Pages	177-182
Number of pages	6
ISBN (Print)	1-4244-0780-X
DOIs	https://doi.org/10.1109/ICMTS.2007.374478
Publication status	Published - 19 Mar 2007
Event	20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 - Tokyo, Japan Duration: 19 Mar 2007 → 22 Mar 2007 Conference number: 20

Publication series

Name
Publisher	IEEE Computer Society Press
Number	2

Conference

Conference	20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007
Abbreviated title	ICMTS
Country/Territory	Japan
City	Tokyo
Period	19/03/07 → 22/03/07

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield
METIS-241562
IR-67043
EWI-9607

Access to Document

10.1109/ICMTS.2007.374478

Cite this

@inproceedings{2f70a3e995374ad09de76730074d9dff,

title = "Methodology for performing RF reliability experiments on a generic test structure",

abstract = "This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield, METIS-241562, IR-67043, EWI-9607",

author = "G.T. Sasse and {de Vries}, {Rein J.} and Jurriaan Schmitz",

note = "IEEE catalog number 07CH37856 library of congress 2006936504; 20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 ; Conference date: 19-03-2007 Through 22-03-2007",

year = "2007",

month = mar,

day = "19",

doi = "10.1109/ICMTS.2007.374478",

language = "Undefined",

isbn = "1-4244-0780-X",

publisher = "IEEE",

number = "2",

pages = "177--182",

booktitle = "20th ICMTS Conference Proceedings",

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}

Sasse, GT, de Vries, RJ & Schmitz, J 2007, Methodology for performing RF reliability experiments on a generic test structure. in 20th ICMTS Conference Proceedings., 10.1109/ICMTS.2007.374478, IEEE, Los Alamitos, pp. 177-182, 20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007, Tokyo, Japan, 19/03/07. https://doi.org/10.1109/ICMTS.2007.374478

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T1 - Methodology for performing RF reliability experiments on a generic test structure

AU - Sasse, G.T.

AU - de Vries, Rein J.

AU - Schmitz, Jurriaan

N1 - Conference code: 20

PY - 2007/3/19

Y1 - 2007/3/19

N2 - This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.

AB - This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

KW - METIS-241562

KW - IR-67043

KW - EWI-9607

U2 - 10.1109/ICMTS.2007.374478

DO - 10.1109/ICMTS.2007.374478

M3 - Conference contribution

SN - 1-4244-0780-X

SP - 177

EP - 182

BT - 20th ICMTS Conference Proceedings

PB - IEEE

CY - Los Alamitos

T2 - 20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007

Y2 - 19 March 2007 through 22 March 2007

ER -