Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.
|Publisher||IEEE Computer Society Press|
|Conference||17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008|
|Period||23/02/08 → 28/02/08|
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