MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices

M. Klee; W. Keur; R. Mauczok; H. van Esch; M. de Wild; J. Liu; A. Roest; K. Reimann; Ch. Renders; L. Peters; M.P.J. Tiggelman; O. Wunnicke; K. Neumann

doi:10.1109/ISAF.2008.4693744

MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices

M. Klee
, W. Keur
, R. Mauczok
, H. van Esch
, M. de Wild
, J. Liu
, A. Roest
, K. Reimann
, Ch. Renders
, L. Peters
, M.P.J. Tiggelman
, O. Wunnicke
, K. Neumann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

94 Downloads (Pure)

Abstract

Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

Original language	Undefined
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008
Place of Publication	Piscataway
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	978-1-4244-2744-4
DOIs	https://doi.org/10.1109/ISAF.2008.4693744
Publication status	Published - 23 Feb 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Re, United States Duration: 23 Feb 2008 → 28 Feb 2008 Conference number: 17

Publication series

Name
Publisher	IEEE Computer Society Press
Volume	2

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Abbreviated title	ISAF
Country/Territory	United States
City	Santa Re
Period	23/02/08 → 28/02/08

Keywords

SC-CICC: Characterization of IC Components
METIS-263749
IR-62753
EWI-15138

Access to Document

10.1109/ISAF.2008.4693744

Klee_Tiggelman

Cite this

Klee, M., Keur, W., Mauczok, R., van Esch, H., de Wild, M., Liu, J., Roest, A., Reimann, K., Renders, C., Peters, L., Tiggelman, M. P. J., Wunnicke, O., & Neumann, K. (2008). MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices. In 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008 (pp. 1-4). Article 10.1109/ISAF.2008.4693744 IEEE. https://doi.org/10.1109/ISAF.2008.4693744

@inproceedings{d90ab53c28ca4f7abfd29a1a3d280bed,

title = "MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices",

abstract = "Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80\%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.",

keywords = "SC-CICC: Characterization of IC Components, METIS-263749, IR-62753, EWI-15138",

author = "M. Klee and W. Keur and R. Mauczok and \{van Esch\}, H. and \{de Wild\}, M. and J. Liu and A. Roest and K. Reimann and Ch. Renders and L. Peters and M.P.J. Tiggelman and O. Wunnicke and K. Neumann",

note = "10.1109/ISAF.2008.4693744 ; 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

year = "2008",

month = feb,

day = "23",

doi = "10.1109/ISAF.2008.4693744",

language = "Undefined",

isbn = "978-1-4244-2744-4",

publisher = "IEEE",

pages = "1--4",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008",

address = "United States",

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Klee, M, Keur, W, Mauczok, R, van Esch, H, de Wild, M, Liu, J, Roest, A, Reimann, K, Renders, C, Peters, L, Tiggelman, MPJ, Wunnicke, O & Neumann, K 2008, MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices. in 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008., 10.1109/ISAF.2008.4693744, IEEE, Piscataway, pp. 1-4, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Re, New Mexico, United States, 23/02/08. https://doi.org/10.1109/ISAF.2008.4693744

MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices. / Klee, M.; Keur, W.; Mauczok, R. et al.
17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008. Piscataway: IEEE, 2008. p. 1-4 10.1109/ISAF.2008.4693744.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Klee, M.

AU - Keur, W.

AU - Mauczok, R.

AU - van Esch, H.

AU - de Wild, M.

AU - Liu, J.

AU - Roest, A.

AU - Reimann, K.

AU - Renders, Ch.

AU - Peters, L.

AU - Tiggelman, M.P.J.

AU - Wunnicke, O.

AU - Neumann, K.

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N2 - Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

AB - Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

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KW - EWI-15138

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BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008. ISAF 2008

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T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -