Micromagnetic simulations of the domain structure and the magnetization reversal of Co50Ni50/Pt multilayer dots

S. Sindhu; M.A.M. Haast; K. Ramstöck; L. Abelmann; J.C. Lodder

doi:10.1016/S0304-8853(01)00919-2

Micromagnetic simulations of the domain structure and the magnetization reversal of Co₅₀Ni₅₀/Pt multilayer dots

S. Sindhu, M.A.M. Haast, K. Ramstöck, L. Abelmann, J.C. Lodder^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

8 Downloads (Pure)

Abstract

The domain structure and the switching field of Co50 Ni50 /Pt multilayer dots, prepared by laser interference lithography,were micromagnetically simulated. The simulations were carried out with a three-dimensional simulation package, optimized for large-scale problems. The single-domain state is the lowest energy state for dots with a diameter below 75 nm. The switching field was computed by using suitable minimization techniques, and was used to analyze the effect of size, dot shape and edge defects.

Original language	English
Pages (from-to)	246-251
Number of pages	6
Journal	Journal of magnetism and magnetic materials
Volume	238
Issue number	2-3
DOIs	https://doi.org/10.1016/S0304-8853(01)00919-2
Publication status	Published - 2002

Keywords

SMI-TST: From 2006 in EWI-TST
TST-uSPAM: micro Scanning Probe Array Memory
SMI-MAT: MATERIALS
Magnetic dots
Hysteresis
Domain observation
Numerical micromagnetics
Patterned Media
Magnetization reversal

Access to Document

10.1016/S0304-8853(01)00919-2

Cite this

@article{091886db08bd42e7ba3a301429e0022e,

title = "Micromagnetic simulations of the domain structure and the magnetization reversal of Co50Ni50/Pt multilayer dots",

abstract = "The domain structure and the switching field of Co50 Ni50 /Pt multilayer dots, prepared by laser interference lithography,were micromagnetically simulated. The simulations were carried out with a three-dimensional simulation package, optimized for large-scale problems. The single-domain state is the lowest energy state for dots with a diameter below 75 nm. The switching field was computed by using suitable minimization techniques, and was used to analyze the effect of size, dot shape and edge defects.",

keywords = "SMI-TST: From 2006 in EWI-TST, TST-uSPAM: micro Scanning Probe Array Memory, SMI-MAT: MATERIALS, Magnetic dots, Hysteresis, Domain observation, Numerical micromagnetics, Patterned Media, Magnetization reversal",

author = "S. Sindhu and M.A.M. Haast and K. Ramst{\"o}ck and L. Abelmann and J.C. Lodder",

year = "2002",

doi = "10.1016/S0304-8853(01)00919-2",

language = "English",

volume = "238",

pages = "246--251",

journal = "Journal of magnetism and magnetic materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Micromagnetic simulations of the domain structure and the magnetization reversal of Co50Ni50/Pt multilayer dots

AU - Sindhu, S.

AU - Haast, M.A.M.

AU - Ramstöck, K.

AU - Abelmann, L.

AU - Lodder, J.C.

PY - 2002

Y1 - 2002

N2 - The domain structure and the switching field of Co50 Ni50 /Pt multilayer dots, prepared by laser interference lithography,were micromagnetically simulated. The simulations were carried out with a three-dimensional simulation package, optimized for large-scale problems. The single-domain state is the lowest energy state for dots with a diameter below 75 nm. The switching field was computed by using suitable minimization techniques, and was used to analyze the effect of size, dot shape and edge defects.

AB - The domain structure and the switching field of Co50 Ni50 /Pt multilayer dots, prepared by laser interference lithography,were micromagnetically simulated. The simulations were carried out with a three-dimensional simulation package, optimized for large-scale problems. The single-domain state is the lowest energy state for dots with a diameter below 75 nm. The switching field was computed by using suitable minimization techniques, and was used to analyze the effect of size, dot shape and edge defects.

KW - SMI-TST: From 2006 in EWI-TST

KW - TST-uSPAM: micro Scanning Probe Array Memory

KW - SMI-MAT: MATERIALS

KW - Magnetic dots

KW - Hysteresis

KW - Domain observation

KW - Numerical micromagnetics

KW - Patterned Media

KW - Magnetization reversal

U2 - 10.1016/S0304-8853(01)00919-2

DO - 10.1016/S0304-8853(01)00919-2

M3 - Article

SN - 0304-8853

VL - 238

SP - 246

EP - 251

JO - Journal of magnetism and magnetic materials

JF - Journal of magnetism and magnetic materials

IS - 2-3