Microscopic theory of atomic diffusion mechanisms in silicon

R. Car, P. J. Kelly, A. Oshiyama, S. T. Pantelides

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6 Citations (Scopus)
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Abstract

Self-interstitials in Si are known to migrate athermally at very low temperatures (-4 K). In contrast, at hightemperatures (1100-1600 K), self-diffusion has an activation energy of -5 eV. We describe results of self-consistent Green's-function total energy calculations which, for the first time, provide detailed microscopic understanding of the mechanisms underlying these phenomena and reconcile the contrasting low- and high-temperature data.

Original languageEnglish
Pages (from-to)401-407
Number of pages7
JournalPhysica B+C
Volume127
Issue number1-3
DOIs
Publication statusPublished - 1 Jan 1984
Externally publishedYes

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Silicon
Green's function
Temperature
Activation energy

Cite this

Car, R. ; Kelly, P. J. ; Oshiyama, A. ; Pantelides, S. T. / Microscopic theory of atomic diffusion mechanisms in silicon. In: Physica B+C. 1984 ; Vol. 127, No. 1-3. pp. 401-407.
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Microscopic theory of atomic diffusion mechanisms in silicon. / Car, R.; Kelly, P. J.; Oshiyama, A.; Pantelides, S. T.

In: Physica B+C, Vol. 127, No. 1-3, 01.01.1984, p. 401-407.

Research output: Contribution to journalArticleAcademicpeer-review

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