Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

Pietro Andricciola, P. Andricciola, Hans Tuinhout, Nicole Wils, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.
    Original languageUndefined
    Title of host publication24th International Conference on Microelectronic Test Structures, ICMTS 2011
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages90-94
    Number of pages5
    ISBN (Print)978-1-4244-8527-7
    DOIs
    Publication statusPublished - 4 Apr 2011
    Event24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 24
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

    Publication series

    Name
    PublisherIEEE Electron Devices Society
    ISSN (Print)1071-9032

    Conference

    Conference24th International Conference on Microelectronic Test Structures, ICMTS 2011
    Abbreviated titleICMTS
    CountryNetherlands
    CityAmsterdam
    Period4/04/117/04/11
    Internet address

    Keywords

    • METIS-278717
    • EWI-20198
    • IR-77948

    Cite this

    Andricciola, P., Andricciola, P., Tuinhout, H., Wils, N., & Schmitz, J. (2011). Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion. In 24th International Conference on Microelectronic Test Structures, ICMTS 2011 (pp. 90-94). USA: IEEE Electron Devices Society. https://doi.org/10.1109/ICMTS.2011.5976866