Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

Pietro Andricciola; P. Andricciola; Hans Tuinhout; Nicole Wils; Jurriaan Schmitz

doi:10.1109/ICMTS.2011.5976866

Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

Pietro Andricciola, P. Andricciola, Hans Tuinhout, Nicole Wils, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.

Original language	Undefined
Title of host publication	24th International Conference on Microelectronic Test Structures, ICMTS 2011
Place of Publication	USA
Publisher	IEEE
Pages	90-94
Number of pages	5
ISBN (Print)	978-1-4244-8527-7
DOIs	https://doi.org/10.1109/ICMTS.2011.5976866
Publication status	Published - 4 Apr 2011
Event	24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands Duration: 4 Apr 2011 → 7 Apr 2011 Conference number: 24 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Publication series

Name
Publisher	IEEE Electron Devices Society
ISSN (Print)	1071-9032

Conference

Conference	24th International Conference on Microelectronic Test Structures, ICMTS 2011
Abbreviated title	ICMTS
Country/Territory	Netherlands
City	Amsterdam
Period	4/04/11 → 7/04/11
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Keywords

METIS-278717
EWI-20198
IR-77948

Access to Document

10.1109/ICMTS.2011.5976866

http://eprints.eemcs.utwente.nl/secure2/20198/01/5.2_andricciola.pdf

Cite this

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title = "Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion",

abstract = "We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.",

keywords = "METIS-278717, EWI-20198, IR-77948",

author = "Pietro Andricciola and P. Andricciola and Hans Tuinhout and Nicole Wils and Jurriaan Schmitz",

note = "10.1109/ICMTS.2011.5976866 ; 24th International Conference on Microelectronic Test Structures, ICMTS 2011 ; Conference date: 04-04-2011 Through 07-04-2011",

year = "2011",

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day = "4",

doi = "10.1109/ICMTS.2011.5976866",

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publisher = "IEEE",

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Andricciola, P, Andricciola, P, Tuinhout, H, Wils, N & Schmitz, J 2011, Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion. in 24th International Conference on Microelectronic Test Structures, ICMTS 2011. IEEE, USA, pp. 90-94, 24th International Conference on Microelectronic Test Structures, ICMTS 2011, Amsterdam, Netherlands, 4/04/11. https://doi.org/10.1109/ICMTS.2011.5976866

TY - GEN

T1 - Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

AU - Andricciola, Pietro

AU - Andricciola, P.

AU - Tuinhout, Hans

AU - Wils, Nicole

AU - Schmitz, Jurriaan

N1 - Conference code: 24

PY - 2011/4/4

Y1 - 2011/4/4

N2 - We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.

AB - We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.

KW - METIS-278717

KW - EWI-20198

KW - IR-77948

U2 - 10.1109/ICMTS.2011.5976866

DO - 10.1109/ICMTS.2011.5976866

M3 - Conference contribution

SN - 978-1-4244-8527-7

SP - 90

EP - 94

BT - 24th International Conference on Microelectronic Test Structures, ICMTS 2011

PB - IEEE

CY - USA

T2 - 24th International Conference on Microelectronic Test Structures, ICMTS 2011

Y2 - 4 April 2011 through 7 April 2011

ER -