Microstructure of YBaCuO Josephson junctions in relation to their properties

K. Verbist; O.I. Lebedev; M.A.J. Verhoeven; R.G. Wichern; A.J.H.M. Rijnders; D.H.A. Blank; F. Tafuri; H. Bender; G. van Tendeloo

doi:10.1088/0953-2048/11/1/004

Microstructure of YBaCuO Josephson junctions in relation to their properties

K. Verbist, O.I. Lebedev, M.A.J. Verhoeven, R.G. Wichern, A.J.H.M. Rijnders, D.H.A. Blank, F. Tafuri, H. Bender, G. van Tendeloo

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Abstract

The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.

Original language	English
Pages (from-to)	13-20
Number of pages	8
Journal	Superconductor science and technology
Volume	11
Issue number	1
DOIs	https://doi.org/10.1088/0953-2048/11/1/004
Publication status	Published - 1998

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@article{78abf22242d44625b410886c228665cf,

title = "Microstructure of YBaCuO Josephson junctions in relation to their properties",

abstract = "The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.",

author = "K. Verbist and O.I. Lebedev and M.A.J. Verhoeven and R.G. Wichern and A.J.H.M. Rijnders and D.H.A. Blank and F. Tafuri and H. Bender and {van Tendeloo}, G.",

year = "1998",

doi = "10.1088/0953-2048/11/1/004",

language = "English",

volume = "11",

pages = "13--20",

journal = "Superconductor science and technology",

issn = "0953-2048",

publisher = "Institute of Physics (IOP)",

number = "1",

}

TY - JOUR

T1 - Microstructure of YBaCuO Josephson junctions in relation to their properties

AU - Verbist, K.

AU - Lebedev, O.I.

AU - Verhoeven, M.A.J.

AU - Wichern, R.G.

AU - Rijnders, A.J.H.M.

AU - Blank, D.H.A.

AU - Tafuri, F.

AU - Bender, H.

AU - van Tendeloo, G.

PY - 1998

Y1 - 1998

N2 - The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.

AB - The microstructure of various types of Josephson junctions is investigated with cross-sectional (CS) high-resolution electron microscopy (HREM). Special specimen preparation techniques, to facilitate the CS investigation, are discussed in the first part. Examples are shown of specially produced arrays of junctions and of the focused ion beam thinning technique allowing us to investigate specific measured junctions. Ramp-type junctions with (PrBCGaO) barrier layers are discussed in more detail in the second part. The microstructure of PrBCGaO (0.1 < x < 1.0) thin films, barrier layers and bulk material is studied by HREM. Thin barrier layers with contain a Ga-rich intergrowth, never observed before in YBCO-type structures. Ga-rich inclusions in single thin films exhibit a similar structure. In addition, diffusion of Ga in the ion-etched substrate surface region was observed. The observed segregation of Ga from the PrBCGaO barrier layer explains the observed junction properties.

U2 - 10.1088/0953-2048/11/1/004

DO - 10.1088/0953-2048/11/1/004

M3 - Article

SN - 0953-2048

VL - 11

SP - 13

EP - 20

JO - Superconductor science and technology

JF - Superconductor science and technology

IS - 1

ER -

Microstructure of YBaCuO Josephson junctions in relation to their properties

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