Microwave Conductivity in Two-Band Superconductors V 3+x Si1-x

Oleg V. Dolgov, Alexander A. Golubov, Yuri A. Nefyodov, Alexei M. Shuvaev, Mikhail R. Trunin*

*Corresponding author for this work

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We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ(T)−iσ(T) at frequency 9.4 GHz in series of single crystals V3+xSi1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature Tc, suppression of superconducting transition temperature Tc by nonmagnetic impurities, a positive curvature of σ(T) curves close to Tc, and a coherence peak in σ(T) at T∼Tc/2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of Tc and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.

Original languageEnglish
Pages (from-to)331-337
Number of pages7
JournalJournal of superconductivity and novel magnetism
Issue number2
Publication statusPublished - Feb 2014


  • BCS theory
  • Complex conductivity of superconductors
  • Microwave surface impedance
  • Two-band model
  • 2023 OA procedure


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