Microwave Conductivity in Two-Band Superconductors V3+x Si1−x

O.V. Dolgov, Alexandre Avraamovitch Golubov, Y.A. Nefyodov, A. M. Shuvaev, M.R. Trunin

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ ′(T)−i σ ″(T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ ″(T) curves close to T c , and a coherence peak in σ ′(T) at T∼T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.
Original languageEnglish
Pages (from-to)331-337
JournalJournal of superconductivity and novel magnetism
Volume28
Issue number2
DOIs
Publication statusPublished - 2015

Keywords

  • IR-93520
  • METIS-307821

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