Microwave Conductivity in Two-Band Superconductors V3+x Si1−x

O.V. Dolgov; Alexandre Avraamovitch Golubov; Y.A. Nefyodov; A. M. Shuvaev; M.R. Trunin

doi:10.1007/s10948-014-2700-3

Microwave Conductivity in Two-Band Superconductors V3+x Si1−x

O.V. Dolgov, Alexandre Avraamovitch Golubov, Y.A. Nefyodov, A. M. Shuvaev, M.R. Trunin

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ ′(T)−i σ ″(T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ ″(T) curves close to T c , and a coherence peak in σ ′(T) at T∼T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.

Original language	English
Pages (from-to)	331-337
Journal	Journal of superconductivity and novel magnetism
Volume	28
Issue number	2
DOIs	https://doi.org/10.1007/s10948-014-2700-3
Publication status	Published - 2015

Keywords

IR-93520
METIS-307821

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10.1007/s10948-014-2700-3

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title = "Microwave Conductivity in Two-Band Superconductors V3+x Si1−x",

abstract = "We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ ′(T)−i σ ″(T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ ″(T) curves close to T c , and a coherence peak in σ ′(T) at T∼T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.",

keywords = "IR-93520, METIS-307821",

author = "O.V. Dolgov and Golubov, {Alexandre Avraamovitch} and Y.A. Nefyodov and Shuvaev, {A. M.} and M.R. Trunin",

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doi = "10.1007/s10948-014-2700-3",

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T1 - Microwave Conductivity in Two-Band Superconductors V3+x Si1−x

AU - Dolgov, O.V.

AU - Golubov, Alexandre Avraamovitch

AU - Nefyodov, Y.A.

AU - Shuvaev, A. M.

AU - Trunin, M.R.

PY - 2015

Y1 - 2015

N2 - We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ ′(T)−i σ ″(T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ ″(T) curves close to T c , and a coherence peak in σ ′(T) at T∼T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.

AB - We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ ′(T)−i σ ″(T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ ″(T) curves close to T c , and a coherence peak in σ ′(T) at T∼T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.

KW - IR-93520

KW - METIS-307821

U2 - 10.1007/s10948-014-2700-3

DO - 10.1007/s10948-014-2700-3

M3 - Article

VL - 28

SP - 331

EP - 337

JO - Journal of superconductivity and novel magnetism

JF - Journal of superconductivity and novel magnetism

SN - 1557-1939

IS - 2

ER -