TY - JOUR
T1 - Minimizing the Interface-Driven Losses in Inverted Perovskite Solar Cells and Modules
AU - Zhang, Xin
AU - Qiu, Weiming
AU - Apergi, Sofia
AU - Singh, Shivam
AU - Marchezi, Paulo
AU - Song, Wenya
AU - Sternemann, Christian
AU - Elkhouly, Karim
AU - Zhang, Dong
AU - Aguirre, Aranzazu
AU - Merckx, Tamara
AU - Krishna, Anurag
AU - Shi, Yuanyuan
AU - Bracesco, Andrea
AU - van Helvoirt, Cristian
AU - Bens, Frennie
AU - Zardetto, Valerio
AU - D’Haen, Jan
AU - Yu, Anran
AU - Brocks, Geert
AU - Aernouts, Tom
AU - Moons, Ellen
AU - Tao, Shuxia
AU - Zhan, Yiqiang
AU - Kuang, Yinghuan
AU - Poortmans, Jef
PY - 2023/6/9
Y1 - 2023/6/9
N2 - The inverted p-i-n perovskite solar cells hold high promise for scale-up toward commercialization. However, the interfaces between the perovskite and the charge transport layers contribute to major power conversion efficiency (PCE) loss and instability. Here, we use a single material of 2-thiopheneethylammonium chloride (TEACl) to molecularly engineer both the interface between the perovskite and fullerene-C60 electron transport layer and the buried interface between the perovskite and NiOx-based hole transport layer. The dual interface modification results in optimized band alignment, suppressed nonradiative recombination, and improved interfacial contact. A PCE of 24.3% is demonstrated, with open-circuit voltage (Voc) and fill factor (FF) of 1.17 V and 84.6%, respectively. The unencapsulated device retains >97.0% of the initial performance after 1000 h of maximum power point tracking under illumination. Moreover, a PCE of 22.6% and a remarkable FF of 82.4% are obtained for a mini-module with an active area of 3.63
AB - The inverted p-i-n perovskite solar cells hold high promise for scale-up toward commercialization. However, the interfaces between the perovskite and the charge transport layers contribute to major power conversion efficiency (PCE) loss and instability. Here, we use a single material of 2-thiopheneethylammonium chloride (TEACl) to molecularly engineer both the interface between the perovskite and fullerene-C60 electron transport layer and the buried interface between the perovskite and NiOx-based hole transport layer. The dual interface modification results in optimized band alignment, suppressed nonradiative recombination, and improved interfacial contact. A PCE of 24.3% is demonstrated, with open-circuit voltage (Voc) and fill factor (FF) of 1.17 V and 84.6%, respectively. The unencapsulated device retains >97.0% of the initial performance after 1000 h of maximum power point tracking under illumination. Moreover, a PCE of 22.6% and a remarkable FF of 82.4% are obtained for a mini-module with an active area of 3.63
KW - 2023 OA procedure
UR - http://www.scopus.com/inward/record.url?scp=85160952442&partnerID=8YFLogxK
U2 - 10.1021/acsenergylett.3c00697
DO - 10.1021/acsenergylett.3c00697
M3 - Article
AN - SCOPUS:85160952442
SN - 2380-8195
VL - 8
SP - 2532
EP - 2542
JO - ACS Energy Letters
JF - ACS Energy Letters
IS - 6
ER -