Minority Carrier Injection in High-Barrier Si-Schottky Diodes

Gaurav Gupta* (Corresponding Author), Satadal Dutta, Sourish Banerjee, Raymond J.E. Hueting

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)
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    Abstract

    In this paper, we investigate the presence of minority carriers and their role in charge carrier transport in silicon (Si) Schottky diodes with a high potential barrier. Using TCAD simulations along with an analytical model, we show that an inversion charge is induced at the metal-semiconductor (MS) interface in a high-barrier Schottky diode which imparts bipolar-type current characteristics to otherwise a unipolar Schottky diode, even at low-injection operation. In such a high-barrier diode, minority diffusion also becomes important along with the majority carrier thermionic emission and therefore cannot be neglected, unlike in a conventional Schottky diode. The presence of minority carriers at low injection in a high-barrier Si Schottky diode has been experimentally verified via a prior-reported two-diode electrical test method, reverse recovery measurements, and by measuring infrared electroluminescence. It is also shown, via TCAD simulations, that the diffusion component becomes more pronounced in case of a reduced Gummel number and at elevated temperatures.

    Original languageEnglish
    Pages (from-to)1276-1282
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume65
    Issue number4
    DOIs
    Publication statusPublished - 1 Apr 2018

    Keywords

    • Diffusion
    • Electrostatic doping
    • Metal work function
    • Minority carriers
    • P-n junctions
    • Schottky barrier (SB)
    • Shallow junctions
    • Silicon
    • Thermionic emission (TE)

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