Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

V.E. Houtsma; J. Holleman; C. Salm; I.R. de Haan; J. Schmitz; F.P. Widdershoven; P.H. Woerlee

doi:10.1109/IEDM.1999.824192

Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material

V.E. Houtsma, J. Holleman, C. Salm, I.R. de Haan, J. Schmitz, F.P. Widdershoven, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

185 Downloads (Pure)

Abstract

In this paper the I-V conduction mechanism for gate injection (-V_g), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(t_bd) of PMOS capacitors with p⁺-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -V_g of our devices. Time-to-breakdown data are presented and discussed.

Original language	English
Title of host publication	International Electron Devices Meeting 1999
Subtitle of host publication	Washington, DC, December 5-8, 1999, IEDM technical digest
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	457-460
Number of pages	4
ISBN (Electronic)	0-7803-5413-3
ISBN (Print)	0-7803-5410-9, 0-7803-5411-7
DOIs	https://doi.org/10.1109/IEDM.1999.824192
Publication status	Published - Dec 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, United States Duration: 5 Dec 1999 → 8 Dec 1999

Publication series

Name	International Electron Devices Meeting, IEDM Technical Digest
Publisher	IEEE
Volume	1999
ISSN (Print)	0163-1918

Conference

Conference	1999 IEEE International Devices Meeting (IEDM)
Abbreviated title	IEDM 1999
Country/Territory	United States
City	Washington
Period	5/12/99 → 8/12/99

Access to Document

10.1109/IEDM.1999.824192

Minority Carrier Tunneling and Stress-Induces leakage Current for P+ gate MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate MaterialSubmitted version, 286 KBLicence: Unspecified

Cite this

Houtsma, V. E., Holleman, J., Salm, C., de Haan, I. R., Schmitz, J., Widdershoven, F. P., & Woerlee, P. H. (1999). Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material. In International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest (pp. 457-460). (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1999). IEEE. https://doi.org/10.1109/IEDM.1999.824192

Houtsma, V.E. ; Holleman, J. ; Salm, C. et al. / Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material. International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ : IEEE, 1999. pp. 457-460 (International Electron Devices Meeting, IEDM Technical Digest).

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abstract = "In this paper the I-V conduction mechanism for gate injection (-Vg), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -Vg of our devices. Time-to-breakdown data are presented and discussed.",

author = "V.E. Houtsma and J. Holleman and C. Salm and {de Haan}, I.R. and J. Schmitz and F.P. Widdershoven and P.H. Woerlee",

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Houtsma, VE, Holleman, J, Salm, C, de Haan, IR, Schmitz, J, Widdershoven, FP & Woerlee, PH 1999, Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material. in International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. International Electron Devices Meeting, IEDM Technical Digest, vol. 1999, IEEE, Piscataway, NJ, pp. 457-460, 1999 IEEE International Devices Meeting (IEDM), Washington, District of Columbia, United States, 5/12/99. https://doi.org/10.1109/IEDM.1999.824192

Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material. / Houtsma, V.E.; Holleman, J.; Salm, C. et al.
International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE, 1999. p. 457-460 (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - In this paper the I-V conduction mechanism for gate injection (-Vg), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -Vg of our devices. Time-to-breakdown data are presented and discussed.

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Houtsma VE, Holleman J, Salm C, de Haan IR, Schmitz J, Widdershoven FP et al. Minority carrier tunneling and stress-induced leakage current for p⁺ gate MOS capacitors with poly-Si and poly-Si_0.7Ge_0.3 gate material. In International Electron Devices Meeting 1999: Washington, DC, December 5-8, 1999, IEDM technical digest. Piscataway, NJ: IEEE. 1999. p. 457-460. (International Electron Devices Meeting, IEDM Technical Digest). doi: 10.1109/IEDM.1999.824192