Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Duc Minh Nguyen; Jan M. Dekkers; Evert Houwman; Ruud Steenwelle; Xin Wan; Andreas Roelofs; Thorsten Schmitz-Kempen; Guus Rijnders

doi:10.1063/1.3669527

Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Duc Minh Nguyen, Jan M. Dekkers, Evert Houwman, Ruud Steenwelle, Xin Wan, Andreas Roelofs, Thorsten Schmitz-Kempen, Guus Rijnders

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Abstract

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector

Original language	English
Article number	252904
Number of pages	4
Journal	Applied physics letters
Volume	99
Issue number	25
DOIs	https://doi.org/10.1063/1.3669527
Publication status	Published - 2011

Keywords

Tensile strength
Internal stresses
Strontium compounds
Piezoelectric thin films
Dielectric polarisation
Lead compounds
Thin film capacitors
Pulsed laser deposition
Electrodes
Epitaxial layers
Thermal expansion
Ferroelectric capacitors
Ferroelectric thin films

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10.1063/1.3669527

Nguyen2011misfitFinal published version, 972 KB

Cite this

@article{0f4f9630cfc24ef99dfe0cef51d2c90b,

title = "Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films",

abstract = "A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector",

keywords = "Tensile strength, Internal stresses, Strontium compounds, Piezoelectric thin films, Dielectric polarisation, Lead compounds, Thin film capacitors, Pulsed laser deposition, Electrodes, Epitaxial layers, Thermal expansion, Ferroelectric capacitors, Ferroelectric thin films",

author = "Nguyen, {Duc Minh} and Dekkers, {Jan M.} and Evert Houwman and Ruud Steenwelle and Xin Wan and Andreas Roelofs and Thorsten Schmitz-Kempen and Guus Rijnders",

year = "2011",

doi = "10.1063/1.3669527",

language = "English",

volume = "99",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

AU - Nguyen, Duc Minh

AU - Dekkers, Jan M.

AU - Houwman, Evert

AU - Steenwelle, Ruud

AU - Wan, Xin

AU - Roelofs, Andreas

AU - Schmitz-Kempen, Thorsten

AU - Rijnders, Guus

PY - 2011

Y1 - 2011

N2 - A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector

AB - A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector

KW - Tensile strength

KW - Internal stresses

KW - Strontium compounds

KW - Piezoelectric thin films

KW - Dielectric polarisation

KW - Lead compounds

KW - Thin film capacitors

KW - Pulsed laser deposition

KW - Electrodes

KW - Epitaxial layers

KW - Thermal expansion

KW - Ferroelectric capacitors

KW - Ferroelectric thin films

U2 - 10.1063/1.3669527

DO - 10.1063/1.3669527

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied physics letters

JF - Applied physics letters

IS - 25

M1 - 252904

ER -