Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Duc Minh Nguyen, Jan M. Dekkers, Evert Pieter Houwman, Ruud Johannes Antonius Steenwelle, X. Wang, X. Wan, Andreas Roelofs, Thorsten Schmitz-Kempen, Augustinus J.H.M. Rijnders

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Abstract

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector
Original languageEnglish
Article number252904
Number of pages4
JournalApplied physics letters
Volume99
Issue number25
DOIs
Publication statusPublished - 2011

Keywords

  • Tensile strength
  • Internal stresses
  • Strontium compounds
  • Piezoelectric thin films
  • Dielectric polarisation
  • Lead compounds
  • Thin film capacitors
  • Pulsed laser deposition
  • Electrodes
  • Epitaxial layers
  • Thermal expansion
  • Ferroelectric capacitors
  • Ferroelectric thin films

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