Mismatch sources in LDMOS devices

Pietro Andricciola; P. Andricciola; Hans Tuinhout

doi:10.1109/ESSDERC.2010.5618457

Mismatch sources in LDMOS devices

Pietro Andricciola, P. Andricciola, Hans Tuinhout

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

741 Downloads (Pure)

Abstract

This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.

Original language	Undefined
Title of host publication	Proceedings of the 40th European Solid-State Device Research, Essderc 2010
Place of Publication	USA
Publisher	IEEE
Pages	126-129
Number of pages	4
ISBN (Print)	978-1-4244-6660-3
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618457
Publication status	Published - 13 Sept 2010
Event	40th European Solid State Device Research Conference, ESSDERC 2010 - Hotel Barcelo Renacimiento, Sevilla, Spain Duration: 13 Sept 2010 → 17 Sept 2010 Conference number: 40

Publication series

Name
Publisher	IEEE Solid-State Circuits Society

Conference

Conference	40th European Solid State Device Research Conference, ESSDERC 2010
Abbreviated title	ESSDERC
Country/Territory	Spain
City	Sevilla
Period	13/09/10 → 17/09/10

Keywords

METIS-277428
EWI-18467
IR-75632

Access to Document

10.1109/ESSDERC.2010.5618457

Cite this

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title = "Mismatch sources in LDMOS devices",

abstract = "This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.",

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AU - Andricciola, Pietro

AU - Andricciola, P.

AU - Tuinhout, Hans

N1 - Conference code: 40

PY - 2010/9/13

Y1 - 2010/9/13

N2 - This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.

AB - This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.

KW - METIS-277428

KW - EWI-18467

KW - IR-75632

U2 - 10.1109/ESSDERC.2010.5618457

DO - 10.1109/ESSDERC.2010.5618457

M3 - Conference contribution

SN - 978-1-4244-6660-3

SP - 126

EP - 129

BT - Proceedings of the 40th European Solid-State Device Research, Essderc 2010

PB - IEEE

CY - USA

T2 - 40th European Solid State Device Research Conference, ESSDERC 2010

Y2 - 13 September 2010 through 17 September 2010

ER -