Mismatch sources in LDMOS devices

Pietro Andricciola, P. Andricciola, Hans Tuinhout

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    2 Citations (Scopus)
    314 Downloads (Pure)

    Abstract

    This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.
    Original languageUndefined
    Title of host publicationProceedings of the 40th European Solid-State Device Research, Essderc 2010
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages126-129
    Number of pages4
    ISBN (Print)978-1-4244-6660-3
    DOIs
    Publication statusPublished - 13 Sep 2010
    Event40th European Solid State Device Research Conference, ESSDERC 2010 - Hotel Barcelo Renacimiento, Sevilla, Spain
    Duration: 13 Sep 201017 Sep 2010
    Conference number: 40

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society

    Conference

    Conference40th European Solid State Device Research Conference, ESSDERC 2010
    Abbreviated titleESSDERC
    CountrySpain
    CitySevilla
    Period13/09/1017/09/10

    Keywords

    • METIS-277428
    • EWI-18467
    • IR-75632

    Cite this

    Andricciola, P., Andricciola, P., & Tuinhout, H. (2010). Mismatch sources in LDMOS devices. In Proceedings of the 40th European Solid-State Device Research, Essderc 2010 (pp. 126-129). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2010.5618457