Mixing and rectification properties of MIM diodes

S.K. Masalmeh; H.K.E. Stadermann; J. Korving

doi:10.1016/0921-4526(95)00558-7

Mixing and rectification properties of MIM diodes

S.K. Masalmeh^*, H.K.E. Stadermann, J. Korving

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this work we study the nonlinearity of the I-V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts (R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important.

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(95)00558-7
Publication status	Published - 1 Feb 1996
Externally published	Yes

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10.1016/0921-4526(95)00558-7

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abstract = "In this work we study the nonlinearity of the I-V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts (R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important.",

author = "S.K. Masalmeh and H.K.E. Stadermann and J. Korving",

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N2 - In this work we study the nonlinearity of the I-V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts (R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important.

AB - In this work we study the nonlinearity of the I-V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts (R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important.

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U2 - 10.1016/0921-4526(95)00558-7

DO - 10.1016/0921-4526(95)00558-7

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SN - 0921-4526

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Mixing and rectification properties of MIM diodes

Abstract

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