Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers

H. Myoren; J. Chen; T. Yamashita; L. Amatuni; A.H. Sonnenberg; G.J. Gerritsma; H. Rogalla

doi:10.1109/77.783868

Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers

H. Myoren, J. Chen, T. Yamashita, L. Amatuni, A.H. Sonnenberg, G.J. Gerritsma, H. Rogalla

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Abstract

We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.

Original language	English
Pages (from-to)	3854-3857
Number of pages	4
Journal	IEEE transactions on applied superconductivity
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/77.783868
Publication status	Published - 1999

Keywords

Josephson junctions
Buffer layers
Surface morphology
Substrates
Fabrication
Sputter etching
High temperature superconductors
Superconducting epitaxial layers
Atomic force microscopy (AFM)
Sputtering

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title = "Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers",

abstract = "We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.",

keywords = "Josephson junctions, Buffer layers, Surface morphology, Substrates, Fabrication, Sputter etching, High temperature superconductors, Superconducting epitaxial layers, Atomic force microscopy (AFM), Sputtering",

author = "H. Myoren and J. Chen and T. Yamashita and L. Amatuni and A.H. Sonnenberg and G.J. Gerritsma and H. Rogalla",

year = "1999",

doi = "10.1109/77.783868",

language = "English",

volume = "9",

pages = "3854--3857",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

publisher = "IEEE",

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TY - JOUR

T1 - Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers

AU - Myoren, H.

AU - Chen, J.

AU - Yamashita, T.

AU - Amatuni, L.

AU - Sonnenberg, A.H.

AU - Gerritsma, G.J.

AU - Rogalla, H.

PY - 1999

Y1 - 1999

N2 - We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.

AB - We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.

KW - Josephson junctions

KW - Buffer layers

KW - Surface morphology

KW - Substrates

KW - Fabrication

KW - Sputter etching

KW - High temperature superconductors

KW - Superconducting epitaxial layers

KW - Atomic force microscopy (AFM)

KW - Sputtering

U2 - 10.1109/77.783868

DO - 10.1109/77.783868

M3 - Article

SN - 1051-8223

VL - 9

SP - 3854

EP - 3857

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 2

ER -

Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers

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Keywords

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