Mm and sub-mm properties of ramp-type Josephson jucntions on MgO with STO buffer layers

H. Myoren, J. Chen, T. Yamashita, L. Amatuni, A.H. Sonnenberg, G.J. Gerritsma, H. Rogalla

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.
    Original languageEnglish
    Pages (from-to)3854-3857
    Number of pages4
    JournalIEEE transactions on applied superconductivity
    Volume9
    Issue number2
    DOIs
    Publication statusPublished - 1999

    Keywords

    • Josephson junctions
    • Buffer layers
    • Surface morphology
    • Substrates
    • Fabrication
    • Sputter etching
    • High temperature superconductors
    • Superconducting epitaxial layers
    • Atomic force microscopy (AFM)
    • Sputtering

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