Modeling charge transfer at organic donor-acceptor semiconductor interfaces

Deniz Cakir, Menno Bokdam, Machiel Pieter de Jong, M. Fahlman, G. Brocks

Research output: Contribution to journalArticleAcademicpeer-review

20 Citations (Scopus)
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Abstract

We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations.
Original languageUndefined
Pages (from-to)203302
Number of pages4
JournalApplied physics letters
Volume100
Issue number20
DOIs
Publication statusPublished - 14 May 2012

Keywords

  • EWI-22903
  • IR-83568
  • METIS-290459
  • METIS-296223

Cite this

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Modeling charge transfer at organic donor-acceptor semiconductor interfaces. / Cakir, Deniz; Bokdam, Menno; de Jong, Machiel Pieter; Fahlman, M.; Brocks, G.

In: Applied physics letters, Vol. 100, No. 20, 14.05.2012, p. 203302.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Modeling charge transfer at organic donor-acceptor semiconductor interfaces

AU - Cakir, Deniz

AU - Bokdam, Menno

AU - de Jong, Machiel Pieter

AU - Fahlman, M.

AU - Brocks, G.

N1 - http://eprints.ewi.utwente.nl/22903

PY - 2012/5/14

Y1 - 2012/5/14

N2 - We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations.

AB - We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations.

KW - EWI-22903

KW - IR-83568

KW - METIS-290459

KW - METIS-296223

U2 - 10.1063/1.4717985

DO - 10.1063/1.4717985

M3 - Article

VL - 100

SP - 203302

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 20

ER -