Modeling charge transfer at organic donor-acceptor semiconductor interfaces

Deniz Cakir; Menno Bokdam; Machiel Pieter de Jong; M. Fahlman; G. Brocks

doi:10.1063/1.4717985

Modeling charge transfer at organic donor-acceptor semiconductor interfaces

Deniz Cakir, Menno Bokdam, Machiel Pieter de Jong, M. Fahlman, G. Brocks

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations.

Original language	English
Pages (from-to)	203302
Number of pages	4
Journal	Applied physics letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4717985
Publication status	Published - 14 May 2012

Keywords

EWI-22903
IR-83568
METIS-290459
METIS-296223

Access to Document

10.1063/1.4717985

http://eprints.eemcs.utwente.nl/secure2/22903/01/Modeling_charge_transfer_at_organic_donor-acceptor_semiconductor_interfaces_PUBLISHED.pdf

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Cakir, D., Bokdam, M., de Jong, M. P., Fahlman, M., & Brocks, G. (2012). Modeling charge transfer at organic donor-acceptor semiconductor interfaces. Applied physics letters, 100(20), 203302. https://doi.org/10.1063/1.4717985

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