Modeling of FlowFET characteristics

Y. S.Leung Ki*, R. B.M. Schasfoort, S. Sclautmann, Ph Renaud, A. Van Den Berg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
22 Downloads (Pure)

Abstract

Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage VG - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.

Original languageEnglish
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages544-547
Number of pages4
Publication statusPublished - 1 Dec 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, United States
Duration: 27 Mar 200029 Mar 2000

Conference

Conference2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Abbreviated titleMSM 2000
CountryUnited States
CitySan Diego
Period27/03/0029/03/00

Keywords

  • ζ-potential
  • Double layer
  • Electrokinetic effects
  • FlowFET
  • Microfluidics

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    Ki, Y. S. L., Schasfoort, R. B. M., Sclautmann, S., Renaud, P., & Van Den Berg, A. (2000). Modeling of FlowFET characteristics. In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 544-547)