Modeling of FlowFET characteristics

Y. S.Leung Ki; R. B.M. Schasfoort; S. Sclautmann; Ph Renaud; A. Van Den Berg

Modeling of FlowFET characteristics

Y. S.Leung Ki^*, R. B.M. Schasfoort, S. Sclautmann, Ph Renaud, A. Van Den Berg

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

27 Downloads (Pure)

Abstract

Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage V_G - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V _G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.

Original language	English
Title of host publication	2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Editors	M. Laudon, B. Romanowicz
Pages	544-547
Number of pages	4
Publication status	Published - 1 Dec 2000
Event	2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, United States Duration: 27 Mar 2000 → 29 Mar 2000

Conference

Conference	2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Abbreviated title	MSM 2000
Country/Territory	United States
City	San Diego
Period	27/03/00 → 29/03/00

Keywords

ζ-potential
Double layer
Electrokinetic effects
FlowFET
Microfluidics

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@inproceedings{b27201ba03f047eb953c284d6c03177a,

title = "Modeling of FlowFET characteristics",

abstract = "Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage VG - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.",

keywords = "ζ-potential, Double layer, Electrokinetic effects, FlowFET, Microfluidics",

author = "Ki, {Y. S.Leung} and Schasfoort, {R. B.M.} and S. Sclautmann and Ph Renaud and {Van Den Berg}, A.",

year = "2000",

month = dec,

day = "1",

language = "English",

isbn = "0966613570",

pages = "544--547",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000",

note = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000, MSM 2000 ; Conference date: 27-03-2000 Through 29-03-2000",

}

Ki, YSL, Schasfoort, RBM, Sclautmann, S, Renaud, P & Van Den Berg, A 2000, Modeling of FlowFET characteristics. in M Laudon & B Romanowicz (eds), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. pp. 544-547, 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000, San Diego, California, United States, 27/03/00.

Modeling of FlowFET characteristics. / Ki, Y. S.Leung; Schasfoort, R. B.M.; Sclautmann, S.; Renaud, Ph; Van Den Berg, A.

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. ed. / M. Laudon; B. Romanowicz. 2000. p. 544-547.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modeling of FlowFET characteristics

AU - Ki, Y. S.Leung

AU - Schasfoort, R. B.M.

AU - Sclautmann, S.

AU - Renaud, Ph

AU - Van Den Berg, A.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage VG - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.

AB - Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage VG - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.

KW - ζ-potential

KW - Double layer

KW - Electrokinetic effects

KW - FlowFET

KW - Microfluidics

UR - http://www.scopus.com/inward/record.url?scp=6344237423&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344237423

SN - 0966613570

SP - 544

EP - 547

BT - 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Y2 - 27 March 2000 through 29 March 2000

ER -

Modeling of FlowFET characteristics

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