Modeling of FlowFET characteristics

Y. S.Leung Ki*, R. B.M. Schasfoort, S. Sclautmann, Ph Renaud, A. Van Den Berg

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    24 Downloads (Pure)

    Abstract

    Classical electrokinetic theory demonstrates that modulation of the ζ-potential at the shear plane can alter both the magnitude and direction of Electroosmotic Flow (EOF) induced in a microchannel at low driving field strengths. In the FlowFET, ζ-potential is modulated by applying a voltage VG - with respect to the driving field cathode through the insulated side walls of the device. An analytical model based on overall charge neutrality is presented which predicts the ζ-potential as a function of V G. This is compared to values of shear plane ζ-potential extracted from EOF rate measurement data in a FlowFET. It is found that the model data and experimentally derived values for ζ-potential are within the same order of magnitude with good agreement between modeled and experimentally observed trends. Discrepancies are due to uncertainties related to experimental observation and lack of Stern layer modeling.

    Original languageEnglish
    Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
    EditorsM. Laudon, B. Romanowicz
    Pages544-547
    Number of pages4
    Publication statusPublished - 1 Dec 2000
    Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, United States
    Duration: 27 Mar 200029 Mar 2000

    Conference

    Conference2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
    Abbreviated titleMSM 2000
    CountryUnited States
    CitySan Diego
    Period27/03/0029/03/00

    Keywords

    • ζ-potential
    • Double layer
    • Electrokinetic effects
    • FlowFET
    • Microfluidics

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