Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

J.S. Kolhatkar; E. Hoekstra; C. Salm; A.P. van der Wel; E.A.M. Klumperink; J. Schmitz; H. Wallinga

doi:10.1109/IEDM.2004.1419283

Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

J.S. Kolhatkar, E. Hoekstra, C. Salm, A.P. van der Wel, E.A.M. Klumperink, J. Schmitz, H. Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

20 Citations (Scopus)

170 Downloads (Pure)

Abstract

The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting (IEDM 2004)
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	759-762
Number of pages	4
ISBN (Print)	0780386841
DOIs	https://doi.org/10.1109/IEDM.2004.1419283
Publication status	Published - Dec 2004
Event	2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States Duration: 13 Dec 2004 → 15 Dec 2004

Conference

Conference	2004 IEEE International Electron Devices Meeting, IEDM 2004
Abbreviated title	IEDM
Country/Territory	United States
City	San Francisco
Period	13/12/04 → 15/12/04

Access to Document

10.1109/IEDM.2004.1419283

2004_proc_iedm_kolhatkar_acceptedSubmitted version, 387 KBLicence: Unspecified

Cite this

@inproceedings{4637937ae1114c938fec743d6352d035,

title = "Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation",

abstract = "The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.",

author = "J.S. Kolhatkar and E. Hoekstra and C. Salm and {van der Wel}, A.P. and E.A.M. Klumperink and J. Schmitz and H. Wallinga",

year = "2004",

month = dec,

doi = "10.1109/IEDM.2004.1419283",

language = "English",

isbn = "0780386841",

pages = "759--762",

booktitle = "IEEE International Electron Devices Meeting (IEDM 2004)",

publisher = "IEEE",

address = "United States",

note = "2004 IEEE International Electron Devices Meeting, IEDM 2004, IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

Kolhatkar, JS, Hoekstra, E, Salm, C, van der Wel, AP, Klumperink, EAM , Schmitz, J & Wallinga, H 2004, Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation. in IEEE International Electron Devices Meeting (IEDM 2004). IEEE, Piscataway, NJ, USA, pp. 759-762, 2004 IEEE International Electron Devices Meeting, IEDM 2004, San Francisco, California, United States, 13/12/04. https://doi.org/10.1109/IEDM.2004.1419283

TY - GEN

T1 - Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

AU - Kolhatkar, J.S.

AU - Hoekstra, E.

AU - Salm, C.

AU - van der Wel, A.P.

AU - Klumperink, E.A.M.

AU - Schmitz, J.

AU - Wallinga, H.

PY - 2004/12

Y1 - 2004/12

N2 - The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.

AB - The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.

U2 - 10.1109/IEDM.2004.1419283

DO - 10.1109/IEDM.2004.1419283

M3 - Conference contribution

SN - 0780386841

SP - 759

EP - 762

BT - IEEE International Electron Devices Meeting (IEDM 2004)

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 2004 IEEE International Electron Devices Meeting, IEDM 2004

Y2 - 13 December 2004 through 15 December 2004

ER -

Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

Abstract

Conference

Access to Document

Fingerprint

Cite this