Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

J.S. Kolhatkar, E. Hoekstra, C. Salm, A.P. van der Wel, E.A.M. Klumperink, J. Schmitz, H. Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    18 Citations (Scopus)
    16 Downloads (Pure)

    Abstract

    The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.
    Original languageEnglish
    Title of host publicationIEEE International Electron Devices Meeting (IEDM 2004)
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages759-762
    Number of pages4
    ISBN (Print)0780386841
    DOIs
    Publication statusPublished - Dec 2004
    Event2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States
    Duration: 13 Dec 200415 Dec 2004

    Conference

    Conference2004 IEEE International Electron Devices Meeting, IEDM 2004
    Abbreviated titleIEDM
    CountryUnited States
    CitySan Francisco
    Period13/12/0415/12/04

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  • Cite this

    Kolhatkar, J. S., Hoekstra, E., Salm, C., van der Wel, A. P., Klumperink, E. A. M., Schmitz, J., & Wallinga, H. (2004). Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation. In IEEE International Electron Devices Meeting (IEDM 2004) (pp. 759-762). Piscataway, NJ, USA: IEEE. https://doi.org/10.1109/IEDM.2004.1419283