Modeling of spin-dependent hot-electron transport in the spin-valve transistor

R. Vlutters, O.M.J. van 't Erve, R. Jansen, S.D. Kim, J.C. Lodder, A. Vedyayev, B. Dieny

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    A phenomenological model is presented that describes spin-dependent hot-electron transport in the spin-valve transistor. The three-dimensional model is based on the Boltzmann equation and takes into account spin-dependent inelastic and elastic scattering within each metal layer of the base and elastic scattering at the interfaces, as well as the injection and collection characteristics of the emitter and collector Schottky barriers. We numerically calculate the attenuation of the hot electrons, as well as their angular distribution of momen-tum, as a function of the position in the metallic base. We investigate how elastic scattering affects the attenuation lengths via the angular distribution of momentum and show that elastic scattering at an interface leads to an increase of the effective bulk attenuation length of the layers after that interface. We also find that the magnetocurrent is changed by interface scattering even if it is taken to be independent of spin. We find that when elastic scattering is significant, the true attenuation lengths are markedly larger than those predicted in a one-directional model from the scattering parameters for elastic and inelastic scattering. The calculations demonstrate that elastic scattering may be the primary reason for the small collector currents observed in the spin-valve transistor experimentally.
    Original languageUndefined
    Pages (from-to)024416-1
    Number of pages11
    JournalPhysical Review B (Condensed Matter and Materials Physics)
    Volume65
    Issue number2
    DOIs
    Publication statusPublished - 2002

    Keywords

    • IR-44243
    • EWI-5661
    • METIS-208694
    • SMI-SPINTRONICS
    • SMI-NE: From 2006 in EWI-NE

    Cite this

    Vlutters, R., van 't Erve, O. M. J., Jansen, R., Kim, S. D., Lodder, J. C., Vedyayev, A., & Dieny, B. (2002). Modeling of spin-dependent hot-electron transport in the spin-valve transistor. Physical Review B (Condensed Matter and Materials Physics), 65(2), 024416-1. https://doi.org/10.1103/PhysRevB.65.024416
    Vlutters, R. ; van 't Erve, O.M.J. ; Jansen, R. ; Kim, S.D. ; Lodder, J.C. ; Vedyayev, A. ; Dieny, B. / Modeling of spin-dependent hot-electron transport in the spin-valve transistor. In: Physical Review B (Condensed Matter and Materials Physics). 2002 ; Vol. 65, No. 2. pp. 024416-1.
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    abstract = "A phenomenological model is presented that describes spin-dependent hot-electron transport in the spin-valve transistor. The three-dimensional model is based on the Boltzmann equation and takes into account spin-dependent inelastic and elastic scattering within each metal layer of the base and elastic scattering at the interfaces, as well as the injection and collection characteristics of the emitter and collector Schottky barriers. We numerically calculate the attenuation of the hot electrons, as well as their angular distribution of momen-tum, as a function of the position in the metallic base. We investigate how elastic scattering affects the attenuation lengths via the angular distribution of momentum and show that elastic scattering at an interface leads to an increase of the effective bulk attenuation length of the layers after that interface. We also find that the magnetocurrent is changed by interface scattering even if it is taken to be independent of spin. We find that when elastic scattering is significant, the true attenuation lengths are markedly larger than those predicted in a one-directional model from the scattering parameters for elastic and inelastic scattering. The calculations demonstrate that elastic scattering may be the primary reason for the small collector currents observed in the spin-valve transistor experimentally.",
    keywords = "IR-44243, EWI-5661, METIS-208694, SMI-SPINTRONICS, SMI-NE: From 2006 in EWI-NE",
    author = "R. Vlutters and {van 't Erve}, O.M.J. and R. Jansen and S.D. Kim and J.C. Lodder and A. Vedyayev and B. Dieny",
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    Vlutters, R, van 't Erve, OMJ, Jansen, R, Kim, SD, Lodder, JC, Vedyayev, A & Dieny, B 2002, 'Modeling of spin-dependent hot-electron transport in the spin-valve transistor' Physical Review B (Condensed Matter and Materials Physics), vol. 65, no. 2, pp. 024416-1. https://doi.org/10.1103/PhysRevB.65.024416

    Modeling of spin-dependent hot-electron transport in the spin-valve transistor. / Vlutters, R.; van 't Erve, O.M.J.; Jansen, R.; Kim, S.D.; Lodder, J.C.; Vedyayev, A.; Dieny, B.

    In: Physical Review B (Condensed Matter and Materials Physics), Vol. 65, No. 2, 2002, p. 024416-1.

    Research output: Contribution to journalArticleAcademicpeer-review

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    AU - Vlutters, R.

    AU - van 't Erve, O.M.J.

    AU - Jansen, R.

    AU - Kim, S.D.

    AU - Lodder, J.C.

    AU - Vedyayev, A.

    AU - Dieny, B.

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    N2 - A phenomenological model is presented that describes spin-dependent hot-electron transport in the spin-valve transistor. The three-dimensional model is based on the Boltzmann equation and takes into account spin-dependent inelastic and elastic scattering within each metal layer of the base and elastic scattering at the interfaces, as well as the injection and collection characteristics of the emitter and collector Schottky barriers. We numerically calculate the attenuation of the hot electrons, as well as their angular distribution of momen-tum, as a function of the position in the metallic base. We investigate how elastic scattering affects the attenuation lengths via the angular distribution of momentum and show that elastic scattering at an interface leads to an increase of the effective bulk attenuation length of the layers after that interface. We also find that the magnetocurrent is changed by interface scattering even if it is taken to be independent of spin. We find that when elastic scattering is significant, the true attenuation lengths are markedly larger than those predicted in a one-directional model from the scattering parameters for elastic and inelastic scattering. The calculations demonstrate that elastic scattering may be the primary reason for the small collector currents observed in the spin-valve transistor experimentally.

    AB - A phenomenological model is presented that describes spin-dependent hot-electron transport in the spin-valve transistor. The three-dimensional model is based on the Boltzmann equation and takes into account spin-dependent inelastic and elastic scattering within each metal layer of the base and elastic scattering at the interfaces, as well as the injection and collection characteristics of the emitter and collector Schottky barriers. We numerically calculate the attenuation of the hot electrons, as well as their angular distribution of momen-tum, as a function of the position in the metallic base. We investigate how elastic scattering affects the attenuation lengths via the angular distribution of momentum and show that elastic scattering at an interface leads to an increase of the effective bulk attenuation length of the layers after that interface. We also find that the magnetocurrent is changed by interface scattering even if it is taken to be independent of spin. We find that when elastic scattering is significant, the true attenuation lengths are markedly larger than those predicted in a one-directional model from the scattering parameters for elastic and inelastic scattering. The calculations demonstrate that elastic scattering may be the primary reason for the small collector currents observed in the spin-valve transistor experimentally.

    KW - IR-44243

    KW - EWI-5661

    KW - METIS-208694

    KW - SMI-SPINTRONICS

    KW - SMI-NE: From 2006 in EWI-NE

    U2 - 10.1103/PhysRevB.65.024416

    DO - 10.1103/PhysRevB.65.024416

    M3 - Article

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    EP - 24411

    JO - Physical review B: Covering condensed matter and materials physics

    JF - Physical review B: Covering condensed matter and materials physics

    SN - 2469-9950

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    ER -