Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

H.C. de Graaff, H.C. de Graaff, W.J. Kloosterman

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    Abstract

    A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it gives the voltage drop and stored minority carrier charge in the collector epilayer as a function of the bias conditions. It covers (total) depletion and quasi-saturation for both ohmic and space charge conditions in the end region of the epilayer. New features are that the collector current and stored charge are given as explicit analytical functions, thus guaranteeing continuity also for their derivatives, and that collector current spreading is taken into account
    Original languageUndefined
    Pages (from-to)274-282
    JournalIEEE transactions on electron devices
    Volume42
    Issue number2
    DOIs
    Publication statusPublished - 1995

    Keywords

    • IR-15187
    • METIS-112061

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