Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors

F. Tamigi*, N. Nenadović, V. D'Alessandro, L. K. Nanver, N. Rinaldi, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

This contribution investigates the scalability of thermal resistance in modern RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.

Original languageEnglish
Title of host publication2004 24th International Conference on Microelectronics
Pages257-260
Number of pages4
DOIs
Publication statusPublished - 28 Jul 2004
Externally publishedYes
Event24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia
Duration: 16 May 200419 May 2004
Conference number: 24

Conference

Conference24th International Conference on Microelectronics, MIEL 2004
Abbreviated titleMIEL 2004
CountrySerbia
CityNis
Period16/05/0419/05/04

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    Tamigi, F., Nenadović, N., D'Alessandro, V., Nanver, L. K., Rinaldi, N., & Slotboom, J. W. (2004). Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors. In 2004 24th International Conference on Microelectronics (pp. 257-260) https://doi.org/10.1109/ICMEL.2004.1314610