Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors

F. Tamigi; N. Nenadović; V. D'Alessandro; L. K. Nanver; N. Rinaldi; J. W. Slotboom

doi:10.1109/ICMEL.2004.1314610

Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors

F. Tamigi^*
, N. Nenadović
, V. D'Alessandro
, L. K. Nanver
, N. Rinaldi
, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

This contribution investigates the scalability of thermal resistance in modern RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.

Original language	English
Title of host publication	2004 24th International Conference on Microelectronics
Pages	257-260
Number of pages	4
DOIs	https://doi.org/10.1109/ICMEL.2004.1314610
Publication status	Published - 28 Jul 2004
Externally published	Yes
Event	24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia Duration: 16 May 2004 → 19 May 2004 Conference number: 24

Conference

Conference	24th International Conference on Microelectronics, MIEL 2004
Abbreviated title	MIEL 2004
Country/Territory	Serbia
City	Nis
Period	16/05/04 → 19/05/04

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10.1109/ICMEL.2004.1314610

Cite this

@inproceedings{d04e9901268a415ead9fdabd3ebe903c,

title = "Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors",

abstract = "This contribution investigates the scalability of thermal resistance in modern RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.",

author = "F. Tamigi and N. Nenadovi{\'c} and V. D'Alessandro and Nanver, \{L. K.\} and N. Rinaldi and Slotboom, \{J. W.\}",

year = "2004",

month = jul,

day = "28",

doi = "10.1109/ICMEL.2004.1314610",

language = "English",

isbn = "0-7803-8166-1",

pages = "257--260",

booktitle = "2004 24th International Conference on Microelectronics",

note = "24th International Conference on Microelectronics, MIEL 2004, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

}

Tamigi, F, Nenadović, N, D'Alessandro, V, Nanver, LK, Rinaldi, N & Slotboom, JW 2004, Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors. in 2004 24th International Conference on Microelectronics. pp. 257-260, 24th International Conference on Microelectronics, MIEL 2004, Nis, Serbia, 16/05/04. https://doi.org/10.1109/ICMEL.2004.1314610

TY - GEN

T1 - Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors

AU - Tamigi, F.

AU - Nenadović, N.

AU - D'Alessandro, V.

AU - Nanver, L. K.

AU - Rinaldi, N.

AU - Slotboom, J. W.

N1 - Conference code: 24

PY - 2004/7/28

Y1 - 2004/7/28

N2 - This contribution investigates the scalability of thermal resistance in modern RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.

AB - This contribution investigates the scalability of thermal resistance in modern RF bipolar transistors. Several different geometries of silicon-on-glass devices are numerically simulated in 3-D and the dependencies on geometric features are evidenced. A convenient meshing procedure is specifically developed for very thin geometries. Simulations are supported by a compact closed-form analytical model. The combination of both simulations and the model allows prediction of thermal resistance at device design stage.

UR - https://www.scopus.com/pages/publications/3142702764

U2 - 10.1109/ICMEL.2004.1314610

DO - 10.1109/ICMEL.2004.1314610

M3 - Conference contribution

AN - SCOPUS:3142702764

SN - 0-7803-8166-1

SP - 257

EP - 260

BT - 2004 24th International Conference on Microelectronics

T2 - 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors

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