A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices . In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
|Publication status||Published - 1991|
|Event||21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland|
Duration: 16 Sep 1991 → 19 Sep 1991
Conference number: 21