Modeling of VIPMOS hot electron gate currents

G.J. Hemink, R.C.M. Wijburg, P.B.M. Wolbert, H. Wallinga

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    A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
    Original languageEnglish
    Pages (from-to)65-68
    JournalMicroelectronic engineering
    Issue number1-4
    Publication statusPublished - 1991
    Event21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland
    Duration: 16 Sept 199119 Sept 1991
    Conference number: 21


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