Modeling of VIPMOS hot electron gate currents

G.J. Hemink; R.C.M. Wijburg; P.B.M. Wolbert; H. Wallinga

doi:10.1016/0167-9317(91)90185-G

Modeling of VIPMOS hot electron gate currents

G.J. Hemink, R.C.M. Wijburg, P.B.M. Wolbert, H. Wallinga

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Abstract

A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.

Original language	English
Pages (from-to)	65-68
Journal	Microelectronic engineering
Volume	15
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(91)90185-G
Publication status	Published - 1991
Event	21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland Duration: 16 Sept 1991 → 19 Sept 1991 Conference number: 21

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title = "Modeling of VIPMOS hot electron gate currents",

abstract = "A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.",

author = "G.J. Hemink and R.C.M. Wijburg and P.B.M. Wolbert and H. Wallinga",

year = "1991",

doi = "10.1016/0167-9317(91)90185-G",

language = "English",

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journal = "Microelectronic engineering",

issn = "0167-9317",

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T1 - Modeling of VIPMOS hot electron gate currents

AU - Hemink, G.J.

AU - Wijburg, R.C.M.

AU - Wolbert, P.B.M.

AU - Wallinga, H.

N1 - Conference code: 21

PY - 1991

Y1 - 1991

N2 - A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.

AB - A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.

U2 - 10.1016/0167-9317(91)90185-G

DO - 10.1016/0167-9317(91)90185-G

M3 - Article

SN - 0167-9317

VL - 15

SP - 65

EP - 68

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 1-4

T2 - 21st European Solid State Device Research Conference, ESSDERC 1991

Y2 - 16 September 1991 through 19 September 1991

ER -

Modeling of VIPMOS hot electron gate currents

Abstract

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