Modeling of VIPMOS hot electron gate currents

G.J. Hemink, R.C.M. Wijburg, P.B.M. Wolbert, H. Wallinga

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)
    93 Downloads (Pure)

    Abstract

    A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
    Original languageEnglish
    Pages (from-to)65-68
    JournalMicroelectronic engineering
    Volume15
    Issue number1-4
    DOIs
    Publication statusPublished - 1991
    Event21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland
    Duration: 16 Sep 199119 Sep 1991
    Conference number: 21

    Fingerprint

    Dive into the research topics of 'Modeling of VIPMOS hot electron gate currents'. Together they form a unique fingerprint.

    Cite this