Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise

A.P. van der Wel, Eric A.M. Klumperink, L.K.J. Vandamme, Bram Nauta

    Research output: Contribution to journalArticleAcademicpeer-review

    54 Citations (Scopus)

    Abstract

    In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.
    Original languageEnglish
    Pages (from-to)1378-1384
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume50
    Issue number5
    DOIs
    Publication statusPublished - May 2003

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    Telegraph
    Networks (circuits)
    Bias voltage

    Keywords

    • Cyclostationary
    • MOSFET
    • Random Telegraph Signal (RTS) noise
    • Simulation
    • IR-45701
    • LF Noise
    • Switched Biasing
    • EWI-14430
    • METIS-212940
    • Large Signal Excitation

    Cite this

    @article{d718e21bf3f14721ad4480f29913c45a,
    title = "Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise",
    abstract = "In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.",
    keywords = "Cyclostationary, MOSFET, Random Telegraph Signal (RTS) noise, Simulation, IR-45701, LF Noise, Switched Biasing, EWI-14430, METIS-212940, Large Signal Excitation",
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    year = "2003",
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    doi = "10.1109/TED.2003.813247",
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    Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise. / van der Wel, A.P.; Klumperink, Eric A.M.; Vandamme, L.K.J.; Nauta, Bram.

    In: IEEE transactions on electron devices, Vol. 50, No. 5, 05.2003, p. 1378-1384.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise

    AU - van der Wel, A.P.

    AU - Klumperink, Eric A.M.

    AU - Vandamme, L.K.J.

    AU - Nauta, Bram

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    N2 - In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.

    AB - In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.

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    KW - EWI-14430

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