Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise

A.P. van der Wel, Eric A.M. Klumperink, L.K.J. Vandamme, Bram Nauta

Research output: Contribution to journalArticleAcademicpeer-review

54 Citations (Scopus)

Abstract

In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.
Original languageEnglish
Pages (from-to)1378-1384
Number of pages7
JournalIEEE transactions on electron devices
Volume50
Issue number5
DOIs
Publication statusPublished - May 2003

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Telegraph
Networks (circuits)
Bias voltage

Keywords

  • Cyclostationary
  • MOSFET
  • Random Telegraph Signal (RTS) noise
  • Simulation
  • IR-45701
  • LF Noise
  • Switched Biasing
  • EWI-14430
  • METIS-212940
  • Large Signal Excitation

Cite this

@article{d718e21bf3f14721ad4480f29913c45a,
title = "Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise",
abstract = "In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.",
keywords = "Cyclostationary, MOSFET, Random Telegraph Signal (RTS) noise, Simulation, IR-45701, LF Noise, Switched Biasing, EWI-14430, METIS-212940, Large Signal Excitation",
author = "{van der Wel}, A.P. and Klumperink, {Eric A.M.} and L.K.J. Vandamme and Bram Nauta",
year = "2003",
month = "5",
doi = "10.1109/TED.2003.813247",
language = "English",
volume = "50",
pages = "1378--1384",
journal = "IEEE transactions on electron devices",
issn = "0018-9383",
publisher = "IEEE",
number = "5",

}

Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise. / van der Wel, A.P.; Klumperink, Eric A.M.; Vandamme, L.K.J.; Nauta, Bram.

In: IEEE transactions on electron devices, Vol. 50, No. 5, 05.2003, p. 1378-1384.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise

AU - van der Wel, A.P.

AU - Klumperink, Eric A.M.

AU - Vandamme, L.K.J.

AU - Nauta, Bram

PY - 2003/5

Y1 - 2003/5

N2 - In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.

AB - In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.

KW - Cyclostationary

KW - MOSFET

KW - Random Telegraph Signal (RTS) noise

KW - Simulation

KW - IR-45701

KW - LF Noise

KW - Switched Biasing

KW - EWI-14430

KW - METIS-212940

KW - Large Signal Excitation

U2 - 10.1109/TED.2003.813247

DO - 10.1109/TED.2003.813247

M3 - Article

VL - 50

SP - 1378

EP - 1384

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 5

ER -