Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices

V. Petrescu, M. Rijnsburger, M. Dekker, A.J. Mouthaan

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the SAFE'98
    Place of PublicationMierlo
    Pages441-443
    Number of pages3
    Publication statusPublished - 26 Nov 1998

    Keywords

    • METIS-113839

    Cite this

    Petrescu, V., Rijnsburger, M., Dekker, M., & Mouthaan, A. J. (1998). Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. In Proceedings of the SAFE'98 (pp. 441-443). Mierlo.
    Petrescu, V. ; Rijnsburger, M. ; Dekker, M. ; Mouthaan, A.J. / Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. Proceedings of the SAFE'98. Mierlo, 1998. pp. 441-443
    @inproceedings{607247dffd5548e1b14ba3f01406f799,
    title = "Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices",
    keywords = "METIS-113839",
    author = "V. Petrescu and M. Rijnsburger and M. Dekker and A.J. Mouthaan",
    year = "1998",
    month = "11",
    day = "26",
    language = "Undefined",
    isbn = "90-73461-15-4",
    pages = "441--443",
    booktitle = "Proceedings of the SAFE'98",

    }

    Petrescu, V, Rijnsburger, M, Dekker, M & Mouthaan, AJ 1998, Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. in Proceedings of the SAFE'98. Mierlo, pp. 441-443.

    Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. / Petrescu, V.; Rijnsburger, M.; Dekker, M.; Mouthaan, A.J.

    Proceedings of the SAFE'98. Mierlo, 1998. p. 441-443.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices

    AU - Petrescu, V.

    AU - Rijnsburger, M.

    AU - Dekker, M.

    AU - Mouthaan, A.J.

    PY - 1998/11/26

    Y1 - 1998/11/26

    KW - METIS-113839

    M3 - Conference contribution

    SN - 90-73461-15-4

    SP - 441

    EP - 443

    BT - Proceedings of the SAFE'98

    CY - Mierlo

    ER -

    Petrescu V, Rijnsburger M, Dekker M, Mouthaan AJ. Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. In Proceedings of the SAFE'98. Mierlo. 1998. p. 441-443