Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices

V. Petrescu, M. Rijnsburger, M. Dekker, A.J. Mouthaan

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the SAFE'98
    Place of PublicationMierlo
    Pages441-443
    Number of pages3
    Publication statusPublished - 26 Nov 1998

    Keywords

    • METIS-113839

    Cite this

    Petrescu, V., Rijnsburger, M., Dekker, M., & Mouthaan, A. J. (1998). Modeling the Stress and Electromigration: the Key to the Main Reliability Problem in Future IC Devices. In Proceedings of the SAFE'98 (pp. 441-443). Mierlo.