Modelling of bulk acoustic wave resonators for microwave filters

Sumy Jose, Raymond Josephus Engelbart Hueting, Andreas Jansman

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    Abstract

    Modelling and development of high Q thin-film bulk acoustic wave (BAW) devices is a topic of research gaining attention due to good selectivity and steep transition band offered by these devices used for cellular applications. A preliminary survey of various modeling approaches of these devices and their validations are presented in this paper. So far two existing one dimensional (1D) models have been investigated and compared. The results obtained from the models show relatively good agreement with experimental data of the FBAR reported in the literature. The prime objective of this project is to investigate novel BAW resonators, to determine the essential physical parameters and to develop physics based model thereof suited for circuit applications.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages558-561
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • SC-DPM: Device Physics and Modeling
    • METIS-255418
    • EWI-14604
    • IR-65215

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