Abstract
Modelling and development of high Q thin-film bulk acoustic wave (BAW) devices is a topic of research gaining attention due to good selectivity and steep transition band offered by these devices used for cellular applications. A preliminary survey of various modeling approaches of these devices and their validations are presented in this paper. So far two existing one dimensional (1D) models have been investigated and compared. The results obtained from the models show relatively good agreement with experimental data of the FBAR reported in the literature. The prime objective of this project is to investigate novel BAW resonators, to determine the essential physical parameters and to develop physics based model thereof suited for circuit applications.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 558-561 |
| Number of pages | 4 |
| ISBN (Print) | 978-90-73461-56-7 |
| Publication status | Published - 27 Nov 2008 |
| Event | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
Workshop
| Workshop | 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 |
|---|---|
| Abbreviated title | SAFE |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 27/11/08 → 28/11/08 |
Keywords
- SC-DPM: Device Physics and Modeling
- METIS-255418
- EWI-14604
- IR-65215