Modelling of diishing for metalchemical mechanical polishing

V. Nguyen Hoang, Peter van der Velden, Roel Daamen, H. van Kranenburg, P.H. Woerlee

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    Abstract

    In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter
    Original languageUndefined
    Title of host publicationProceedings of IEDM 2000
    Place of PublicationSan Francisco, USA
    PublisherIEEE
    Pages-
    Number of pages4
    ISBN (Print)0780364384
    DOIs
    Publication statusPublished - 12 Dec 2000
    Event2000 IEEE International Electron Devices Meeting - San Francisco, United States
    Duration: 10 Dec 200013 Dec 2000

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference2000 IEEE International Electron Devices Meeting
    CountryUnited States
    CitySan Francisco
    Period10/12/0013/12/00

    Keywords

    • METIS-113954
    • IR-17068

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