Modelling of diishing for metalchemical mechanical polishing

V. Nguyen Hoang; Peter van der Velden; Roel Daamen; H. van Kranenburg; P.H. Woerlee

doi:10.1109/IEDM.2000.904364

Modelling of diishing for metalchemical mechanical polishing

V. Nguyen Hoang, Peter van der Velden, Roel Daamen, H. van Kranenburg, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

13 Citations (Scopus)

152 Downloads (Pure)

Abstract

In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter

Original language	Undefined
Title of host publication	Proceedings of IEDM 2000
Place of Publication	San Francisco, USA
Publisher	IEEE
Pages	-
Number of pages	4
ISBN (Print)	0780364384
DOIs	https://doi.org/10.1109/IEDM.2000.904364
Publication status	Published - 12 Dec 2000
Event	2000 IEEE International Electron Devices Meeting - San Francisco, United States Duration: 10 Dec 2000 → 13 Dec 2000

Publication series

Name
Publisher	IEEE

Conference

Conference	2000 IEEE International Electron Devices Meeting
Country/Territory	United States
City	San Francisco
Period	10/12/00 → 13/12/00

Keywords

METIS-113954
IR-17068

Access to Document

10.1109/IEDM.2000.904364

Modelling_of_dishing_-_nguyen

Cite this

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title = "Modelling of diishing for metalchemical mechanical polishing",

abstract = "In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter",

keywords = "METIS-113954, IR-17068",

author = "{Nguyen Hoang}, V. and {van der Velden}, Peter and Roel Daamen and {van Kranenburg}, H. and P.H. Woerlee",

year = "2000",

month = dec,

day = "12",

doi = "10.1109/IEDM.2000.904364",

language = "Undefined",

isbn = "0780364384",

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booktitle = "Proceedings of IEDM 2000",

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TY - GEN

T1 - Modelling of diishing for metalchemical mechanical polishing

AU - Nguyen Hoang, V.

AU - van der Velden, Peter

AU - Daamen, Roel

AU - van Kranenburg, H.

AU - Woerlee, P.H.

PY - 2000/12/12

Y1 - 2000/12/12

N2 - In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter

AB - In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter

KW - METIS-113954

KW - IR-17068

U2 - 10.1109/IEDM.2000.904364

DO - 10.1109/IEDM.2000.904364

M3 - Conference contribution

SN - 0780364384

SP - -

BT - Proceedings of IEDM 2000

PB - IEEE

CY - San Francisco, USA

Y2 - 10 December 2000 through 13 December 2000

ER -