Modelling of diishing for metalchemical mechanical polishing

V. Nguyen Hoang, Peter van der Velden, Roel Daamen, H. van Kranenburg, P.H. Woerlee

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    In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter
    Original languageUndefined
    Title of host publicationProceedings of IEDM 2000
    Place of PublicationSan Francisco, USA
    Number of pages4
    ISBN (Print)0780364384
    Publication statusPublished - 12 Dec 2000
    Event2000 IEEE International Electron Devices Meeting - San Francisco, United States
    Duration: 10 Dec 200013 Dec 2000

    Publication series



    Conference2000 IEEE International Electron Devices Meeting
    Country/TerritoryUnited States
    CitySan Francisco


    • METIS-113954
    • IR-17068

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