Abstract
Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 - 700°C creates an effective p +-layer at the interface and ultrashallow p +n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel number (G E) that appears to be related to the properties of the amorphous boron layer. In this paper, we suggest a wide-bandgap model of the amorphous boron layer to explain how its properties can lead to a suppression of the electron injection from the base into the emitter region thus giving the high G E. The presence of trap states in the bandgap of amorphous boron layer is also considered. They could reduce the majority carrier concentration and change the mobility in the layer contributing to a decrease of G E. It is concluded that the wider bandgap together with the trap states in the bandgap of amorphous boron layer could account for the high emitter Gummel number.
| Original language | English |
|---|---|
| Title of host publication | MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings |
| Pages | 36-41 |
| Number of pages | 6 |
| Publication status | Published - 22 Aug 2012 |
| Externally published | Yes |
| Event | 35th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2012 - Opatija, Croatia Duration: 21 May 2012 → 25 May 2012 Conference number: 35 |
Conference
| Conference | 35th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2012 |
|---|---|
| Abbreviated title | MIPRO 2012 |
| Country | Croatia |
| City | Opatija |
| Period | 21/05/12 → 25/05/12 |
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Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. / Knežević, T.; Suligoj, T.; Šakić, A.; Nanver, L. K.
MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. 2012. p. 36-41 6240610.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions
AU - Knežević, T.
AU - Suligoj, T.
AU - Šakić, A.
AU - Nanver, L. K.
PY - 2012/8/22
Y1 - 2012/8/22
N2 - Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 - 700°C creates an effective p +-layer at the interface and ultrashallow p +n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel number (G E) that appears to be related to the properties of the amorphous boron layer. In this paper, we suggest a wide-bandgap model of the amorphous boron layer to explain how its properties can lead to a suppression of the electron injection from the base into the emitter region thus giving the high G E. The presence of trap states in the bandgap of amorphous boron layer is also considered. They could reduce the majority carrier concentration and change the mobility in the layer contributing to a decrease of G E. It is concluded that the wider bandgap together with the trap states in the bandgap of amorphous boron layer could account for the high emitter Gummel number.
AB - Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 - 700°C creates an effective p +-layer at the interface and ultrashallow p +n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel number (G E) that appears to be related to the properties of the amorphous boron layer. In this paper, we suggest a wide-bandgap model of the amorphous boron layer to explain how its properties can lead to a suppression of the electron injection from the base into the emitter region thus giving the high G E. The presence of trap states in the bandgap of amorphous boron layer is also considered. They could reduce the majority carrier concentration and change the mobility in the layer contributing to a decrease of G E. It is concluded that the wider bandgap together with the trap states in the bandgap of amorphous boron layer could account for the high emitter Gummel number.
UR - http://www.scopus.com/inward/record.url?scp=84865096549&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9789532330724
SP - 36
EP - 41
BT - MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings
ER -