Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions

T. Knežević, T. Suligoj, A. Šakić, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 - 700°C creates an effective p +-layer at the interface and ultrashallow p +n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel number (G E) that appears to be related to the properties of the amorphous boron layer. In this paper, we suggest a wide-bandgap model of the amorphous boron layer to explain how its properties can lead to a suppression of the electron injection from the base into the emitter region thus giving the high G E. The presence of trap states in the bandgap of amorphous boron layer is also considered. They could reduce the majority carrier concentration and change the mobility in the layer contributing to a decrease of G E. It is concluded that the wider bandgap together with the trap states in the bandgap of amorphous boron layer could account for the high emitter Gummel number.

Original languageEnglish
Title of host publicationMIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings
Pages36-41
Number of pages6
Publication statusPublished - 22 Aug 2012
Externally publishedYes
Event35th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2012 - Opatija, Croatia
Duration: 21 May 201225 May 2012
Conference number: 35

Conference

Conference35th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2012
Abbreviated titleMIPRO 2012
CountryCroatia
CityOpatija
Period21/05/1225/05/12

Fingerprint

Boron
Energy gap
Electron injection
Bipolar transistors
Carrier concentration
Diodes
Temperature

Cite this

Knežević, T., Suligoj, T., Šakić, A., & Nanver, L. K. (2012). Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. In MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings (pp. 36-41). [6240610]
Knežević, T. ; Suligoj, T. ; Šakić, A. ; Nanver, L. K. / Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. 2012. pp. 36-41
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Knežević, T, Suligoj, T, Šakić, A & Nanver, LK 2012, Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. in MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings., 6240610, pp. 36-41, 35th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2012, Opatija, Croatia, 21/05/12.

Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. / Knežević, T.; Suligoj, T.; Šakić, A.; Nanver, L. K.

MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. 2012. p. 36-41 6240610.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Knežević T, Suligoj T, Šakić A, Nanver LK. Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions. In MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings. 2012. p. 36-41. 6240610