Modelling of the reservoir effect on electromigration lifetime

Van Hieu Nguyen; Cora Salm; A.J. Mouthaan; F.G. Kuper

doi:10.1109/IPFA.2001.941479

Modelling of the reservoir effect on electromigration lifetime

Van Hieu Nguyen, Cora Salm, A.J. Mouthaan, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

13 Citations (Scopus)

17 Downloads (Pure)

Abstract

Electromigration behaviour in W-plug/metal stripe structures is different from conventional metal-strip structures because there is a blocking boundary formed by the immobile W-plug in the contact/via. Electromigration failures occur more readily close to the W-plug than in metal-strip structures because metal ions are forced away from the contacts/vias by electric current, blocking the contacts/vias area. Several works have reported electromigration lifetime of multiple level interconnects to be influenced by the presence of a reservoir around the contacts/vias. Reservoirs are metal parts that are not or are hardly conducting current that act as a source to provide atoms for the area around the blocking boundary where the atoms migrate away due to the electric current. Interconnect lifetime can be prolonged by using the reservoirs, called the

Original language	English
Title of host publication	Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	169-173
Number of pages	5
ISBN (Print)	0-7803-6675-1
DOIs	https://doi.org/10.1109/IPFA.2001.941479
Publication status	Published - 9 Jul 2001
Event	8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore Duration: 9 Jul 2001 → 13 Jul 2001 Conference number: 8

Conference

Conference	8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001
Abbreviated title	IPFA
Country/Territory	Singapore
City	Singapore
Period	9/07/01 → 13/07/01

Access to Document

10.1109/IPFA.2001.941479

Cite this

@inproceedings{deee111b4aec4a21b236ea25a4404d75,

title = "Modelling of the reservoir effect on electromigration lifetime",

abstract = "Electromigration behaviour in W-plug/metal stripe structures is different from conventional metal-strip structures because there is a blocking boundary formed by the immobile W-plug in the contact/via. Electromigration failures occur more readily close to the W-plug than in metal-strip structures because metal ions are forced away from the contacts/vias by electric current, blocking the contacts/vias area. Several works have reported electromigration lifetime of multiple level interconnects to be influenced by the presence of a reservoir around the contacts/vias. Reservoirs are metal parts that are not or are hardly conducting current that act as a source to provide atoms for the area around the blocking boundary where the atoms migrate away due to the electric current. Interconnect lifetime can be prolonged by using the reservoirs, called the",

author = "Nguyen, {Van Hieu} and Cora Salm and A.J. Mouthaan and F.G. Kuper",

year = "2001",

month = jul,

day = "9",

doi = "10.1109/IPFA.2001.941479",

language = "English",

isbn = "0-7803-6675-1",

pages = "169--173",

booktitle = "Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001",

publisher = "IEEE",

note = "8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001, IPFA ; Conference date: 09-07-2001 Through 13-07-2001",

}

Nguyen, VH, Salm, C, Mouthaan, AJ & Kuper, FG 2001, Modelling of the reservoir effect on electromigration lifetime. in Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001. IEEE, Piscataway, NJ, pp. 169-173, 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001, Singapore, Singapore, 9/07/01. https://doi.org/10.1109/IPFA.2001.941479

Modelling of the reservoir effect on electromigration lifetime. / Nguyen, Van Hieu; Salm, Cora; Mouthaan, A.J. et al.

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001. Piscataway, NJ : IEEE, 2001. p. 169-173.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modelling of the reservoir effect on electromigration lifetime

AU - Nguyen, Van Hieu

AU - Salm, Cora

AU - Mouthaan, A.J.

AU - Kuper, F.G.

N1 - Conference code: 8

PY - 2001/7/9

Y1 - 2001/7/9

N2 - Electromigration behaviour in W-plug/metal stripe structures is different from conventional metal-strip structures because there is a blocking boundary formed by the immobile W-plug in the contact/via. Electromigration failures occur more readily close to the W-plug than in metal-strip structures because metal ions are forced away from the contacts/vias by electric current, blocking the contacts/vias area. Several works have reported electromigration lifetime of multiple level interconnects to be influenced by the presence of a reservoir around the contacts/vias. Reservoirs are metal parts that are not or are hardly conducting current that act as a source to provide atoms for the area around the blocking boundary where the atoms migrate away due to the electric current. Interconnect lifetime can be prolonged by using the reservoirs, called the

AB - Electromigration behaviour in W-plug/metal stripe structures is different from conventional metal-strip structures because there is a blocking boundary formed by the immobile W-plug in the contact/via. Electromigration failures occur more readily close to the W-plug than in metal-strip structures because metal ions are forced away from the contacts/vias by electric current, blocking the contacts/vias area. Several works have reported electromigration lifetime of multiple level interconnects to be influenced by the presence of a reservoir around the contacts/vias. Reservoirs are metal parts that are not or are hardly conducting current that act as a source to provide atoms for the area around the blocking boundary where the atoms migrate away due to the electric current. Interconnect lifetime can be prolonged by using the reservoirs, called the

UR - http://www.scopus.com/inward/record.url?scp=0034832417&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2001.941479

DO - 10.1109/IPFA.2001.941479

M3 - Conference contribution

SN - 0-7803-6675-1

SP - 169

EP - 173

BT - Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001

PB - IEEE

CY - Piscataway, NJ

T2 - 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001

Y2 - 9 July 2001 through 13 July 2001

ER -

Modelling of the reservoir effect on electromigration lifetime

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this