Modelling of the reservoir effect on electromigration lifetime

Van Hieu Nguyen, Cora Salm, A.J. Mouthaan, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    13 Citations (Scopus)
    4 Downloads (Pure)

    Abstract

    Electromigration behaviour in W-plug/metal stripe structures is different from conventional metal-strip structures because there is a blocking boundary formed by the immobile W-plug in the contact/via. Electromigration failures occur more readily close to the W-plug than in metal-strip structures because metal ions are forced away from the contacts/vias by electric current, blocking the contacts/vias area. Several works have reported electromigration lifetime of multiple level interconnects to be influenced by the presence of a reservoir around the contacts/vias. Reservoirs are metal parts that are not or are hardly conducting current that act as a source to provide atoms for the area around the blocking boundary where the atoms migrate away due to the electric current. Interconnect lifetime can be prolonged by using the reservoirs, called the
    Original languageEnglish
    Title of host publicationProceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages169-173
    Number of pages5
    ISBN (Print)0-7803-6675-1
    DOIs
    Publication statusPublished - 9 Jul 2001
    Event8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore
    Duration: 9 Jul 200113 Jul 2001
    Conference number: 8

    Conference

    Conference8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001
    Abbreviated titleIPFA
    CountrySingapore
    CitySingapore
    Period9/07/0113/07/01

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