Modified spin relaxation mechanism by tunable coupling between interfacial two-dimensional electron gases in correlated oxide heterostructures

M. Huijben, G.W.J. Hassink, M.P. Stehno, Zhaoliang Liao, A.J.H.M. Rijnders, Alexander Brinkman, G. Koster

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
65 Downloads (Pure)

Abstract

Control of spin relaxation is an important prerequisite for the successful implementation of spintronic devices in a materials system. We realized two directly coupled two-dimensional (2D) electron gases (2DEG-2DEG) in a LaAlO3−SrTiO3 heterostructure system and observed a modification of the spin relaxation mechanism by varying the coupling strength. A strong enhancement of the carrier density for separation distances below a critical thickness of 6 unit cells was revealed. Electric-field-dependent analysis demonstrated tuning from positive to negative magnetoresistance for large separation distances of 10 unit cells indicating Rashba-type spin-orbit coupling, while for small separation distances of only 1 unit cell the magnetoresistance always remained positive. Analysis of the spin-orbit relaxation time and elastic scattering time revealed a modification of the spin relaxation mechanism between Elliott-Yafet and D’yakonov-Perel’ for separation distances of 1 and 10 unit cells, respectively. The tunable spin relaxation fits very well with the presence (or absence) of structural inversion symmetry in our coupled 2DEGs system for different separation distances.
Original languageEnglish
Article number075310
Number of pages11
JournalPhysical review B: Covering condensed matter and materials physics
Volume96
Issue number7
DOIs
Publication statusPublished - 2017

Fingerprint Dive into the research topics of 'Modified spin relaxation mechanism by tunable coupling between interfacial two-dimensional electron gases in correlated oxide heterostructures'. Together they form a unique fingerprint.

  • Cite this