Modulation of conductance and superconductivity by top-gating in LaAIO3/SrTiO3 2-dimensional electron systems

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Abstract

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied.
Original languageUndefined
Article number201603
Pages (from-to)201603
Number of pages4
JournalApplied physics letters
Volume103
Issue number20
DOIs
Publication statusPublished - 26 Oct 2013

Keywords

  • EWI-24379
  • IR-89199
  • METIS-302680

Cite this

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title = "Modulation of conductance and superconductivity by top-gating in LaAIO3/SrTiO3 2-dimensional electron systems",
abstract = "We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied.",
keywords = "EWI-24379, IR-89199, METIS-302680",
author = "P.D. Eerkes and {van der Wiel}, {Wilfred Gerard} and H. Hilgenkamp",
note = "eemcs-eprint-24379",
year = "2013",
month = "10",
day = "26",
doi = "10.1063/1.4829555",
language = "Undefined",
volume = "103",
pages = "201603",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
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Modulation of conductance and superconductivity by top-gating in LaAIO3/SrTiO3 2-dimensional electron systems. / Eerkes, P.D.; van der Wiel, Wilfred Gerard; Hilgenkamp, H.

In: Applied physics letters, Vol. 103, No. 20, 201603, 26.10.2013, p. 201603.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Modulation of conductance and superconductivity by top-gating in LaAIO3/SrTiO3 2-dimensional electron systems

AU - Eerkes, P.D.

AU - van der Wiel, Wilfred Gerard

AU - Hilgenkamp, H.

N1 - eemcs-eprint-24379

PY - 2013/10/26

Y1 - 2013/10/26

N2 - We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied.

AB - We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied.

KW - EWI-24379

KW - IR-89199

KW - METIS-302680

U2 - 10.1063/1.4829555

DO - 10.1063/1.4829555

M3 - Article

VL - 103

SP - 201603

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 20

M1 - 201603

ER -