Moisture resistance of SU-8 and KMPR as structural material

V.M. Blanco Carballo; J. Melai; Cora Salm; Jurriaan Schmitz

doi:10.1016/j.mee.2008.12.076

Moisture resistance of SU-8 and KMPR as structural material

V.M. Blanco Carballo, J. Melai, Cora Salm, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

20 Citations (Scopus)

Abstract

This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application.

Original language	Undefined
Article number	10.1016/j.mee.2008.12.076
Pages (from-to)	765-768
Number of pages	4
Journal	Microelectronic engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2008.12.076
Publication status	Published - 2009

Keywords

KMPR
Moisture
Adhesion strength
EWI-15225
SC-RID: Radiation Imaging detectors
SU-8
CMOS post-processing
IR-62786
METIS-263780

Access to Document

10.1016/j.mee.2008.12.076

http://eprints.eemcs.utwente.nl/secure2/15225/01/MEE_Blanco_Carballo.pdf

Cite this

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title = "Moisture resistance of SU-8 and KMPR as structural material",

abstract = "This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application.",

keywords = "KMPR, Moisture, Adhesion strength, EWI-15225, SC-RID: Radiation Imaging detectors, SU-8, CMOS post-processing, IR-62786, METIS-263780",

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pages = "765--768",

journal = "Microelectronic engineering",

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T1 - Moisture resistance of SU-8 and KMPR as structural material

AU - Blanco Carballo, V.M.

AU - Melai, J.

AU - Salm, Cora

AU - Schmitz, Jurriaan

N1 - 10.1016/j.mee.2008.12.076

PY - 2009

Y1 - 2009

N2 - This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application.

AB - This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application.

KW - KMPR

KW - Moisture

KW - Adhesion strength

KW - EWI-15225

KW - SC-RID: Radiation Imaging detectors

KW - SU-8

KW - CMOS post-processing

KW - IR-62786

KW - METIS-263780

U2 - 10.1016/j.mee.2008.12.076

DO - 10.1016/j.mee.2008.12.076

M3 - Article

VL - 86

SP - 765

EP - 768

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

IS - 4-6

M1 - 10.1016/j.mee.2008.12.076

ER -