Molecular beam and pulsed laser deposition of ZnS: Cr for intermediate band solar cells

Mohammadreza Nematollahi; Xiaodong Yang; Lars Martin Sandvik Aas; Zahra Ghadyani; Morten Kildemo; Ursula J. Gibson; Turid W. Reenaas

doi:10.1016/j.solmat.2015.06.004

Molecular beam and pulsed laser deposition of ZnS: Cr for intermediate band solar cells

Mohammadreza Nematollahi^*, Xiaodong Yang, Lars Martin Sandvik Aas, Zahra Ghadyani, Morten Kildemo, Ursula J. Gibson, Turid W. Reenaas

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

35 Citations (Scopus)

Abstract

We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0-7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related sub-bandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLD. The data indicate that stacking faults are present in all films.

Original language	English
Pages (from-to)	322-330
Number of pages	9
Journal	Solar Energy Materials and Solar Cells
Volume	141
DOIs	https://doi.org/10.1016/j.solmat.2015.06.004
Publication status	Published - 23 Jun 2015
Externally published	Yes

Keywords

Doping and alloying
Intermediate band solar cell
Molecular beam epitaxy
Optical properties
Pulsed laser deposition
Transition-metal-doped semiconductor

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10.1016/j.solmat.2015.06.004

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title = "Molecular beam and pulsed laser deposition of ZnS: Cr for intermediate band solar cells",

abstract = "We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0-7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related sub-bandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLD. The data indicate that stacking faults are present in all films.",

keywords = "Doping and alloying, Intermediate band solar cell, Molecular beam epitaxy, Optical properties, Pulsed laser deposition, Transition-metal-doped semiconductor",

author = "Mohammadreza Nematollahi and Xiaodong Yang and Aas, {Lars Martin Sandvik} and Zahra Ghadyani and Morten Kildemo and Gibson, {Ursula J.} and Reenaas, {Turid W.}",

year = "2015",

month = jun,

day = "23",

doi = "10.1016/j.solmat.2015.06.004",

language = "English",

volume = "141",

pages = "322--330",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

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T2 - Cr for intermediate band solar cells

AU - Nematollahi, Mohammadreza

AU - Yang, Xiaodong

AU - Aas, Lars Martin Sandvik

AU - Ghadyani, Zahra

AU - Kildemo, Morten

AU - Gibson, Ursula J.

AU - Reenaas, Turid W.

PY - 2015/6/23

Y1 - 2015/6/23

N2 - We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0-7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related sub-bandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLD. The data indicate that stacking faults are present in all films.

AB - We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0-7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related sub-bandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLD. The data indicate that stacking faults are present in all films.

KW - Doping and alloying

KW - Intermediate band solar cell

KW - Molecular beam epitaxy

KW - Optical properties

KW - Pulsed laser deposition

KW - Transition-metal-doped semiconductor

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DO - 10.1016/j.solmat.2015.06.004

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VL - 141

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EP - 330

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -

Molecular beam and pulsed laser deposition of ZnS: Cr for intermediate band solar cells

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Keywords

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