Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

W.-Z. Sun; C.L. Zhao; H.-m. Liu; J.-y. Zhang; X.D. Lu; Y.-d. Pan; F. Gou

Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

W.-Z. Sun, C.L. Zhao, H.-m. Liu, J.-y. Zhang, X.D. Lu, Y.-d. Pan, F. Gou

XUV Optics

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed.

Original language	English
Pages (from-to)	317-322
Journal	Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli
Volume	30
Issue number	4
Publication status	Published - 2010

Keywords

METIS-316786

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https://www.researchgate.net/publication/289206284_Molecular_dynamics_simulation_of_the_effects_of_the_samples'_temperature_on_Ar_interactions_with_SiC_surface

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Sun, W.-Z., Zhao, C. L., Liu, H., Zhang, J., Lu, X. D., Pan, Y., & Gou, F. (2010). Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface. Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli, 30(4), 317-322. https://www.researchgate.net/publication/289206284_Molecular_dynamics_simulation_of_the_effects_of_the_samples'_temperature_on_Ar_interactions_with_SiC_surface

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title = "Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface",

abstract = "Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed.",

keywords = "METIS-316786",

author = "W.-Z. Sun and C.L. Zhao and H.-m. Liu and J.-y. Zhang and X.D. Lu and Y.-d. Pan and F. Gou",

year = "2010",

language = "English",

volume = "30",

pages = "317--322",

journal = "Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli",

issn = "0254-6086",

publisher = "Yuan Zi Neng Chuban She",

number = "4",

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Sun, W-Z, Zhao, CL, Liu, H, Zhang, J, Lu, XD, Pan, Y & Gou, F 2010, 'Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface', Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli, vol. 30, no. 4, pp. 317-322. <https://www.researchgate.net/publication/289206284_Molecular_dynamics_simulation_of_the_effects_of_the_samples'_temperature_on_Ar_interactions_with_SiC_surface>

TY - JOUR

T1 - Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

AU - Sun, W.-Z.

AU - Zhao, C.L.

AU - Liu, H.-m.

AU - Zhang, J.-y.

AU - Lu, X.D.

AU - Pan, Y.-d.

AU - Gou, F.

PY - 2010

Y1 - 2010

N2 - Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed.

AB - Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed.

KW - METIS-316786

M3 - Article

SN - 0254-6086

VL - 30

SP - 317

EP - 322

JO - Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli

JF - Nuclear fusion and plasma physics = Hejubian yu Denglizitiwuli

IS - 4

ER -

Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

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