Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

W.-Z. Sun, C.L. Zhao, H.-m. Liu, J.-y. Zhang, X.D. Lu, Y.-d. Pan, F. Gou

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Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed.
Original languageEnglish
Pages (from-to)317-322
JournalNuclear fusion and plasma physics = Hejubian yu Denglizitiwuli
Issue number4
Publication statusPublished - 2010


  • METIS-316786

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