Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes

Erik Jouwert Faber, L.C.P.M. de Smet, Wouter Olthuis, H. Zuilhof, E.J.R. Sudhölter, Piet Bergveld, Albert van den Berg

Research output: Contribution to conferencePaper

Abstract

The influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) devices on p-type (100) silicon is studied by forming MIS (metal-insulatorsemiconductor) diodes via a mercury probe. With the use of current density - voltage (J-V) and capacitance - voltage (C-V) measurements the relevant parameters describing the electrical behavior of these diodes are derived and compared with samples with a native oxide insulator. The insulating properties of these MIS diodes can be precisely tuned by varying the monolayer thickness. Insulating layers with n ≥ 12 show better insulating behavior than native oxide. Despite a comparable thickness of the C16 monolayer as compared to the native oxide layer, the former showed even a tenfold decrease in leakage current. Evaluation of the average tunneling constant (β) of these monolayers reveals 0.45 Å-1. Evaluation of the dielectric constants (εr) gave values of 1.7 ± 0.3 and 2.2 ± 0.4 for n = 16 and 22, respectively, whereas for the fixed charge (Nf) low values of 5.4.1011 and 5.9.1011 cm-2 were found for n = 16 and 22, respectively. The results suggest that Si-C linked monolayers on flat silicon may be a viable, alternative insulator for future electronic devices.

Workshop

WorkshopAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period25/11/0426/11/04

Keywords

  • organic monolayer
  • Semiconductor
  • mercury
  • insulator
  • Silicon
  • IR-59565

Cite this

Faber, E. J., de Smet, L. C. P. M., Olthuis, W., Zuilhof, H., Sudhölter, E. J. R., Bergveld, P., & van den Berg, A. (2004). Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes. 630-638. Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands.
Faber, Erik Jouwert ; de Smet, L.C.P.M. ; Olthuis, Wouter ; Zuilhof, H. ; Sudhölter, E.J.R. ; Bergveld, Piet ; van den Berg, Albert. / Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes. Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands.
@conference{e7c4c858c66e4fb0b1ca7e70f1d04c35,
title = "Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes",
abstract = "The influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) devices on p-type (100) silicon is studied by forming MIS (metal-insulatorsemiconductor) diodes via a mercury probe. With the use of current density - voltage (J-V) and capacitance - voltage (C-V) measurements the relevant parameters describing the electrical behavior of these diodes are derived and compared with samples with a native oxide insulator. The insulating properties of these MIS diodes can be precisely tuned by varying the monolayer thickness. Insulating layers with n ≥ 12 show better insulating behavior than native oxide. Despite a comparable thickness of the C16 monolayer as compared to the native oxide layer, the former showed even a tenfold decrease in leakage current. Evaluation of the average tunneling constant (β) of these monolayers reveals 0.45 {\AA}-1. Evaluation of the dielectric constants (εr) gave values of 1.7 ± 0.3 and 2.2 ± 0.4 for n = 16 and 22, respectively, whereas for the fixed charge (Nf) low values of 5.4.1011 and 5.9.1011 cm-2 were found for n = 16 and 22, respectively. The results suggest that Si-C linked monolayers on flat silicon may be a viable, alternative insulator for future electronic devices.",
keywords = "organic monolayer, Semiconductor, mercury, insulator, Silicon, IR-59565",
author = "Faber, {Erik Jouwert} and {de Smet}, L.C.P.M. and Wouter Olthuis and H. Zuilhof and E.J.R. Sudh{\"o}lter and Piet Bergveld and {van den Berg}, Albert",
year = "2004",
language = "Undefined",
pages = "630--638",
note = "null ; Conference date: 25-11-2004 Through 26-11-2004",

}

Faber, EJ, de Smet, LCPM, Olthuis, W, Zuilhof, H, Sudhölter, EJR, Bergveld, P & van den Berg, A 2004, 'Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes' Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands, 25/11/04 - 26/11/04, pp. 630-638.

Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes. / Faber, Erik Jouwert; de Smet, L.C.P.M.; Olthuis, Wouter; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, Piet; van den Berg, Albert.

2004. 630-638 Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes

AU - Faber,Erik Jouwert

AU - de Smet,L.C.P.M.

AU - Olthuis,Wouter

AU - Zuilhof,H.

AU - Sudhölter,E.J.R.

AU - Bergveld,Piet

AU - van den Berg,Albert

PY - 2004

Y1 - 2004

N2 - The influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) devices on p-type (100) silicon is studied by forming MIS (metal-insulatorsemiconductor) diodes via a mercury probe. With the use of current density - voltage (J-V) and capacitance - voltage (C-V) measurements the relevant parameters describing the electrical behavior of these diodes are derived and compared with samples with a native oxide insulator. The insulating properties of these MIS diodes can be precisely tuned by varying the monolayer thickness. Insulating layers with n ≥ 12 show better insulating behavior than native oxide. Despite a comparable thickness of the C16 monolayer as compared to the native oxide layer, the former showed even a tenfold decrease in leakage current. Evaluation of the average tunneling constant (β) of these monolayers reveals 0.45 Å-1. Evaluation of the dielectric constants (εr) gave values of 1.7 ± 0.3 and 2.2 ± 0.4 for n = 16 and 22, respectively, whereas for the fixed charge (Nf) low values of 5.4.1011 and 5.9.1011 cm-2 were found for n = 16 and 22, respectively. The results suggest that Si-C linked monolayers on flat silicon may be a viable, alternative insulator for future electronic devices.

AB - The influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) devices on p-type (100) silicon is studied by forming MIS (metal-insulatorsemiconductor) diodes via a mercury probe. With the use of current density - voltage (J-V) and capacitance - voltage (C-V) measurements the relevant parameters describing the electrical behavior of these diodes are derived and compared with samples with a native oxide insulator. The insulating properties of these MIS diodes can be precisely tuned by varying the monolayer thickness. Insulating layers with n ≥ 12 show better insulating behavior than native oxide. Despite a comparable thickness of the C16 monolayer as compared to the native oxide layer, the former showed even a tenfold decrease in leakage current. Evaluation of the average tunneling constant (β) of these monolayers reveals 0.45 Å-1. Evaluation of the dielectric constants (εr) gave values of 1.7 ± 0.3 and 2.2 ± 0.4 for n = 16 and 22, respectively, whereas for the fixed charge (Nf) low values of 5.4.1011 and 5.9.1011 cm-2 were found for n = 16 and 22, respectively. The results suggest that Si-C linked monolayers on flat silicon may be a viable, alternative insulator for future electronic devices.

KW - organic monolayer

KW - Semiconductor

KW - mercury

KW - insulator

KW - Silicon

KW - IR-59565

M3 - Paper

SP - 630

EP - 638

ER -

Faber EJ, de Smet LCPM, Olthuis W, Zuilhof H, Sudhölter EJR, Bergveld P et al. Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes. 2004. Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands.