Monocrystalline Yb3+:(Gd,Lu)2O3 channel waveguide laser at 976.8 nm

Henning Kühn, Sebastian Heinrich, Andreas Kahn, Klaus Petermann, J. Bradley, Kerstin Worhoff, Markus Pollnau, Günter Huber

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    26 Citations (Scopus)


    We report on a $Yb^{3+}$-doped sesquioxide waveguide laser based on a lattice-matched $Yb^{3+}$(3%)$:(Gd,Lu)_2O_3$ film that has been epitaxially grown on $Y_2O_3$ using pulsed laser deposition. Rib-channel waveguides have been structured by reactive ion etching. Laser emission at 976.8 nm was observed under pumping with a $Ti^{3+}:Al_2O_3$ laser at 905 nm. A laser threshold of 17 mW and a slope efficiency of 6.7% have been achieved with respect to input power. For an incident pump power of 200 mW, a maximum output power of 12 mW could be realized.
    Original languageEnglish
    Article number10.1364/OL.34.002718
    Pages (from-to)2718-2720
    Number of pages3
    JournalOptics letters
    Issue number18
    Publication statusPublished - 15 Sept 2009


    • EWI-17281
    • IR-69662
    • METIS-264491
    • IOMS-APD: Active Photonic Devices

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